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PDF DXTA42 Data sheet ( Hoja de datos )
| Número de pieza | DXTA42 | |
| Descripción | NPN SURFACE MOUNT TRANSISTOR | |
| Fabricantes | Diodes | |
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DXTA42
NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DXTA92)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 54.8mg (approximate)
3E
COLLECTOR
2,4
Top View
C4 2 C
1B
TOP VIEW
Device Schematic
1
BASE
3
EMITTER
Pin Out Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Value
300
300
6
500
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Static Forward Current Transfer Ratio
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Symbol Min Typ Max Unit
Test Conditions
V(BR)CBO
300
⎯
⎯ V IC = 100μA, IE = 0
V(BR)CEO
300
⎯
⎯ V IC = 1mA, IB = 0
V(BR)EBO
6
⎯ ⎯ V IE = 100μA, IC = 0
ICBO
⎯
⎯ 0.1 μA VCB = 200V, IE = 0
IEBO
⎯
⎯ 0.1 μA VEB = 6V, IC = 0
VCE(SAT)
⎯
⎯ 0.5 V IC = 20mA, IB = 2mA
VBE(SAT)
⎯
⎯ 0.9 V IC = 20mA, IB = 2mA
25 IC = 1mA, VCE = 10V
hFE 40 ⎯ ⎯ ⎯ IC = 10mA, VCE = 10V
40 IC = 30mA, VCE = 10V
fT
50
⎯
⎯
MHz
IC = 10mA, VCE = 20V,
f = 100MHz
Cobo
⎯
⎯
3 pF VCB = 20V, f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
DXTA42
Document number: DS31158 Rev. 4 - 2
1 of 4
www.diodes.com
December 2009
© Diodes Incorporated
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet DXTA42.PDF ] | |
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