Datasheet.kr   

BAS116 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BAS116
기능 SMD Switching Diode
제조업체 Taiwan Semiconductor
로고 Taiwan Semiconductor 로고 



전체 4 페이지

		

No Preview Available !

BAS116 데이터시트, 핀배열, 회로
Small Signal Product
BAS116
Taiwan Semiconductor
225mW, SMD Switching Diode
FEATURES
- Low power loss, high current capability, low VF
- Surface device type mounting
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with
Nickel (Ni) under plate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOT-23
MECHANICAL DATA
- Case: SOT- 23, molded plastic
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 8 mg (approximately)
- Marking Code: JV
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
PD 225
Repetitive Peak Reverse Voltage
Mean Forward Current
VRRM
IO
75
200
Non-Repetitive Peak Forward Surge Current @ t = 1.0 s
IFSM
500
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
RθJA
TJ , TSTG
330
-55 to +150
PARAMETER
SYMBOL
Reverse Breakdown Voltage
IR = 100 μA
IF = 1 mA
VBR
Forward Voltage
IF = 10 mA
IF = 50 mA
VF
IF = 150 mA
Reverse Leakage Current
VR = 75 V
TJ=25°C
TJ=150°C
IR
Junction Capacitance
VR = 0 V , f = 1.0 MHz
CJ
Reverse Recovery Time
(Note 2)
trr
Notes : 1. Valid provided that electrodes are kept at ambient temperature
2. Reverse recovery test conditions : IF=10mA , IR=10mA , RL=100 , IRR= 1mA
MIN
75
-
-
-
-
-
-
-
MAX
-
0.9
1.0
1.1
1.25
5
80
2.0
3.0
UNIT
mW
V
mA
mA
°C/W
°C
UNIT
V
V
nA
pF
ns
Document Number: DS_S1412037
Version: D15




BAS116 pdf, 반도체, 판매, 대치품
Small Signal Product
BAS116
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_S1412037
Version: D15

4페이지













구       성총 4 페이지
다운로드[ BAS116.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
BAS11

Controlled avalanche rectifiers

NXP
NXP
BAS116

Low-leakage diode

NXP
NXP

DataSheet.kr    |   2019   |  연락처   |  링크모음   |   검색  |   사이트맵