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BAS116 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BAS116
기능 SILICON PLANAR SWITCHING DIODE
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BAS116 데이터시트, 핀배열, 회로
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR SWITCHING DIODE
3
Pin Configuration
1 = ANODE
2 = NC
3 = CATHODE
12
BAS116
SOT-23
Formed SMD Package
Marking
BAS116 =JV
Low Leakage Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Forward Current (DC)
Non Repetitive Peak Surge Forward
Current
t=1µs
t=1s
Power Dissipation at Ta=54ºC
Junction Temperature
Storage Temperature Range
SYMBOL
VR
VRRM
IF
IFSM
IFSM
PD
Tj
Tstg
VALUE
80
85
250
4.5
0.5
250
150
- 65 to +150
Thermal Resistance
Junction to Soldering Point
*Rth (j-s)
< 260
*For calculation of Rth (j-a) please refer to application note thermal resistance
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Breakdown Voltage
V(BR)
I(BR)=100µA
Reverse Voltage Leakage Current
Forward Voltage
IR VR=75V
VR=75V, Ta=150ºC
VF IF=1mA
IF=10mA
IF=50mA
IF=150mA
Diode Capacitance
Cd VR=0V, f=1MHz
MIN
85
Reverse Recovery Time When Switched
from
IF=10mA to
trr IR=10mA, RL100 ,
measured at IR=1mA
TYP
2.0
MAX
5.0
80
0.9
1.0
1.1
1.25
1.5
UNIT
V
V
mA
A
A
mW
oC
oC
K/W
UNIT
V
nA
nA
V
V
V
V
pF
µs
BAS116 Rev140505E
Continental Device India Limited
Data Sheet
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