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Número de pieza | BAS85 | |
Descripción | Silicon Schottky Barrier Diode | |
Fabricantes | LGE | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BAS85 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! BAS85
Silicon Schottky Barrier Diode
MINI MELF
Features
For general applications
Low turn-on voltage
PN junction guard ring
Mechanical Data
Glass case
Weight: 0.05g (approx)
Maximum Ratings and Electrical Characteristics
Rating at 25oCambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Characteristic
Continuous reverse voltage
Forward continuous current*
Peak forward current*
Surge forward current*
@ tp = 1s
Power dissipation*
@ TA = 65°C
Junction temperature
Operating temperature range
Storage temperature range
Symbol
VR
IF
IFM
IFSM
Ptot
Tj
TA
TSTG
Dimension in millimeters
Value
30
200
300
600
200
125
-65 to +125
-65 to +150
Unit
V
mA
mA
mA
mW
°C
°C
°C
Electrical Characteristics @ Tj = 25°C unless otherwise specified
Characteristic
Reverse breakdown voltage
10 mA pulses
Symbol
V(BR)R
* Valid provided that electrodes are kept at ambient temperature.
Min
30
Typ
—
Max
—
Unit
V
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1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet BAS85.PDF ] |
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