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PDF L9380 Data sheet ( Hoja de datos )

Número de pieza L9380
Descripción TRIPLE HIGH-SIDE MOSFET DRIVER
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! L9380 Hoja de datos, Descripción, Manual

L9380
TRIPLE HIGH-SIDE MOSFET DRIVER
OVERVOLTAGE CHARGE PUMP SHUT OFF
FOR VVS > 25V
REVERSE BATTERY PROTECTION (REFER-
RING TO THE APPLICATION CIRCUIT DIA-
GRAM)
PROGRAMMABLE OVERLOAD PROTEC-
TION FUNCTION FOR CHANNEL 1 AND 2
OPEN GROUND PROTECTION FUNCTION
FOR CHANNEL 1 AND 2
CONSTANT GATE CHARGE/DISCHARGE
CURRENT
DESCRIPTION
The L9380 device is a controller for three external
N-channel power MOS transistors in "High-Side
Switch" configuration. It is intended for relays re-
placement in automotive electric control units.
PIN CONNECTION (Top view)
SO20
ORDERING NUMBER: L9380
April 1998
T1
VS
N.C.
T2
PR
IN3
IN2
IN1
EN
GND
1 20
2 19
3 18
4 17
5 16
6 15
7 14
8 13
9 12
10 11
D98AT391
CP
D1
N.C.
D2
G1
S1
S2
N.C.
G2
G3
1/12

1 page




L9380 pdf
Figure 4. Timing Characteristic.
VIN
L9380
VG
td
VS
td VDSmin
VT
4.4V
0.4V
Toff
D98AT392
pacitor CCP of 33nF in less than 20ms up to 8V
above VS. The value of CCP depends on the input
capacitance of the external MOS and the decay
of the charge pump voltage down to that value
where no significant influence on the application
occurs.
The necessary charging time for CCP has to be
respected in the sequence of the input control sig-
nals. As a consequence the lower gate to source
voltage can cause a higher drop across the
Power-MOS and get into overload condition. In
this case the overload protection timer will start.
After the protection time the concerned channel
will be switched off. Channel 3 is not equipped
with an overload protection. The same situation
can occur due to a discharge of the storage ca-
pacitor caused by the gate short to ground. The
gate driver that is supplied from the pin CP, which
is the charge pump output, has a sink and source
current capability of 3mA. For a short-circuit of the
load (source to ground) the L9380 has no gate to
source limitation. The gate source protection must
be done externally.
Channel 1 and 2 provide drain to source voltage
sensing possibility with programmable shut-off
delay when the activation threshold was ex-
ceeded. This threshold VDSmin is set by the exter-
nal resistor RD. The bias current flowing through
this resistor is determined by the programming re-
Figure 5. Drain, source input current.
ID
IPR + IDmax
=VD
VS
IPR
0
D98AT393
ISmax IS
sistor RPR. This external resistor RPR defines also
the charge and discharge current of the timer ca-
pacitor CCT. The drain to source threshold VDSmin
and the timer shut off delay time Toff can be cal-
culated:
VDSmin = VPR (RD /RPR)
Toff = 4.4 CT RPR
5/12

5 Page





L9380 arduino
SO20 PACKAGE MECHANICAL DATA
DIM.
MIN.
mm
TYP.
A 2.35
A1 0.1
B 0.33
C 0.23
D 12.6
E 7.4
e 1.27
H 10
h 0.25
L 0.4
K
MAX.
2.65
0.3
0.51
0.32
13
7.6
MIN.
0.093
0.004
0.013
0.009
0.496
0.291
10.65
0.394
0.75 0.010
1.27 0.016
0 (min.)8 (max.)
inch
TYP.
0.050
L9380
MAX.
0.104
0.012
0.020
0.013
0.512
0.299
0.419
0.030
0.050
B
20
1
e
D
L
A
K
h x 45˚
A1
H
C
11
E
10
SO20MEC
11/12

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