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부품번호 | UGF8JD 기능 |
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기능 | Isolated Ultra Fast Rectifiers | ||
제조업체 | Taiwan Semiconductor | ||
로고 | |||
전체 4 페이지수
UGF8JD
Taiwan Semiconductor
CREAT BY ART
Isolated Ultra Fast Rectifier
FEATURES
- Especially suited as boost diode on continuous mode power factor correctors
- Ideal Solution for hard switching condition
- High capability for high di/dt operation. Downsizing of mosfet and heatsink
- High surge current capability
- AEC-Q101 qualified (Green compound not involved)
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ITO-220AC
DESCRIPTION
Especially suited as free wheeling or boost diode in continuous mode
power factor correctors and other power switching applications.
The low stored charge and ultrafast soft recovery minimizes ringing and
electrical noise in power switching circuits. The family drastically cuts losses
in the associated MOSFET when run at high dIF/dt.
MECHANICAL DATA
Case: ITO-220AC
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.7g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
UGF8JD
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
IF= 8 A
Maximum reverse current @ Rated VR TJ=25 ℃
TJ=125 ℃
Reverse recovery time
IF=0.5A, IRR=0.25A, IR=1A, TJ=25℃
IF=1A, dIF/dt=-50A/us, VR=30V, TJ=25℃
Reverse recovery charges
IF=1A, dIF/dt=-200A/us, VR=400V, TJ=125℃
IF=1A, dIF/dt=-200A/us, VR=400V, TJ=125℃
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300 μs, 1% duty cycle
VRRM
IF(AV)
IFSM
VF
IR
Trr
Qrr
IRM
RθJC
TJ
TSTG
600
8.0
100
TYP
13
-
TYP
90
5
2.3
0.5
100
4
- 55 to +150
- 55 to +150
MAX
-
30
MAX
-
5.5
UNIT
V
A
A
V
μA
ns
nC
A
OC/W
OC
OC
Document Number: DS_D1312023
Version: A13
CREAT BY ART
UGF8JD
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1312023
Version: A13
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
UGF8J | Isolated Ultra Fast Rectifiers | Taiwan Semiconductor |
UGF8J | Glass Passivated Super Fast Rectifier | LGE |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |