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BZD27C8V2P PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BZD27C8V2P
기능 Zener Diodes
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BZD27C8V2P 데이터시트, 핀배열, 회로
BZD27C3V6P to BZD27C200P
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
• Sillicon Planar Zener Diodes
• Low profile surface-mount package
• Zener and surge current specification
e3
• Low leakage current
• Excellent stability
• High temperature soldering:
260 °C/10 sec. at terminals
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case: JEDEC DO-219AB (SMF®) Plastic case
Weight: approx. 15 mg
17249
Packaging codes/options:
GS18 / 10 k per 13 " reel, (8 mm tape), 50 k/box
GS08 / 3 k per 7 " reel, (8 mm tape), 30 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Power dissipation
TL = 80 °C
TA = 25 °C
Non-repetitive peak pulse power 100 µs square pulse2)
dissipation
10/1000 µs waveform (BZD27-
C7V5P to BZD27-C100P)2)
10/1000 µs waveform (BZD27-
C110P to BZD27-C200P)2)
1) Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (40 µm thick)
2) TJ = 25 °C prior to surge
Symbol
Ptot
Ptot
PZSM
PRSM
PRSM
Value
2.3
0.81)
300
150
100
Unit
W
W
W
W
W
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air1)
Thermal resistance junction to lead
Test condition
Maximum junction temperature
Storage temperature range
1) Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (40 µm thick)
Symbol
RthJA
RthJL
Tj
TS
Value
180
30
150
- 55 to + 150
Unit
K/W
K/W
°C
°C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
IF = 0.2 A
Document Number 85810
Rev. 1.8, 13-Apr-05
Symbol
Min
Typ.
Max
Unit
VF 1.2 V
www.vishay.com
1




BZD27C8V2P pdf, 반도체, 판매, 대치품
BZD27C3V6P to BZD27C200P
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
10.00
Typ. VF
1.00
Max. VF
0.10
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
17411
VF – Forward Voltage ( V )
Figure 1. Forward Current vs. Forward Voltage
160
140
120
100
80
60
40
20
17414
0
0
25 50 75 100 125 150 175 200
VZnom – Zener Voltage ( V )
Figure 4. Maximum Pulse Power Dissipation vs. Zener Voltage
10000
C5V1P
C6V8P
C12P
C18P
1000
100
C27P
C51P
C200P
10
0.0 0.5 1.0 1.5 2.0 2.5
17412
VR – Reverse Voltage (V)
3.0
Figure 2. Typ. Diode Capacitance vs. Reverse Voltage
IRSM
(%)
100
90
50
t1 = 10 µs
t2 = 1000 µ s
10
17415
t1
t2
t
Figure 5. Non-Repetitive Peak Reverse Current Pulse Definition
3.0
tie point temperature
2.5
2.0
1.5
1.0 ambient temperature
0.5
0.0
0
17413
25 50 75 100 125
Tamb – Ambient Temperature ( qC )
150
Figure 3. Power Dissipation vs. Ambient Temperature
www.vishay.com
4
Document Number 85810
Rev. 1.8, 13-Apr-05

4페이지










BZD27C8V2P 전자부품, 판매, 대치품
BZD27C3V6P to BZD27C200P
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85810
Rev. 1.8, 13-Apr-05
www.vishay.com
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