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PDF RU16P8M4 Data sheet ( Hoja de datos )

Número de pieza RU16P8M4
Descripción P-Channel Advanced Power MOSFET
Fabricantes Ruichips 
Logotipo Ruichips Logotipo



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RU16P8M4
P-Channel Advanced Power MOSFET
Features
• -16V/-8A,
RDS (ON) =40mΩ(Typ.)@VGS=-4.5V
RDS (ON) =65mΩ(Typ.)@VGS=-2.5V
• Super High Dense Cell Design
• Fast Switching Speed
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Load Swtich
• Battery Charge
• DC/DC Converters
Pin Description
G
D
D
S
D
PIN1
S
D
D
SDFN2020
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
Continuous Drain Current@TC(VGS=-4.5V)
ID
Continuous Drain Current@TA(VGS=-4.5V)
Maximum Power Dissipation@TC
PD
Maximum Power Dissipation@TA
S
P-Channel MOSFET
Rating
Unit
TC=25°C
-16
±12
150
-55 to 150
-14
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
-56
-14
-9
-8
-5.6
17.8
7.1
2.5
1.6
A
A
W
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
1
www.ruichips.com

1 page




RU16P8M4 pdf
RU16P8M4
Typical Characteristics
Output Characteristics
50
-3V
-4.5V
40
-2.5V
30
20 -2V
10
-1V
0
01234
-VDS - Drain-Source Voltage (V)
5
Drain-Source On Resistance
2.5
VGS=-4.5V
IDS=-4A
2.0
1.5
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=40mΩ
-25 0 25 50 75 100 125
TJ - Junction Temperature (°C)
150
Capacitance
800
Frequency=1.0MHz
600
400 Ciss
200 Coss
Crss
0
1
10
100
-VDS - Drain-Source Voltage (V)
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
5
Drain-Source On Resistance
200
150
100 -2.5V
50
0
0
100
-4.5V
2468
-ID - Drain Current (A)
10
Source-Drain Diode Forward
10
1 TJ=150°C
TJ=25°C
0.1
0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD - Source-Drain Voltage (V)
Gate Charge
10
9 VDS=-12V
IDS=-4A
8
7
6
5
4
3
2
1
0
02468
QG - Gate Charge (nC)
10
www.ruichips.com

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