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PDF RU1H190S Data sheet ( Hoja de datos )
| Número de pieza | RU1H190S | |
| Descripción | N-Channel Advanced Power MOSFET | |
| Fabricantes | Ruichips | |
| Logotipo |  |
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RU1H190S
N-Channel Advanced Power MOSFET
MOSFET
Features
• 100V/190A,
RDS (ON) =5mΩ (Type) @ VGS=10V,IDS=80A
• Ultra Low On-Resistance
• Exceptional dv/dt capability
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Available
Applications
• Switching Application Systems
Pin Description
TO-220
TO-263
TO-220F
TO-247
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
Rating
100
±25
175
-55 to 175
190
①
720
②
190
②
120
250
125
0.55
Unit
V
°C
°C
A
A
A
W
°C/W
1240
mJ
www.ruichips.com
1 page  
Typical Characteristics
Drain-Source On Resistance
RU1H190S
Source-Drain Diode Forward
Tj - Junction Temperature (°C)
Capacitance
VSD - Source-Drain Voltage (V)
Gate Charge
VDS - Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
5
QG - Gate Charge (nC)
www.ruichips.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet RU1H190S.PDF ] | |
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