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Número de pieza | RU1Z120R | |
Descripción | N-Channel Advanced Power MOSFET | |
Fabricantes | Ruichips | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RU1Z120R (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! RU1Z120R
N-Channel Advanced Power MOSFET
Features
• 150V/120A,
RDS (ON) =11mΩ(Typ.)@VGS=10V
• Reliable and Rugged
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
Applications
• High Speed Power Switching
• High Efficiency Synchronous in SMPS
• Automotive applications and a wide variety of other applications
GDS
TO220
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP①
300μs Pulse Drain Current Tested
ID② Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case
RJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS③
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
150
±25
175
-55 to 175
120
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
480 A
120
A
85
375
W
188
0.4 °C/W
62.5
°C/W
552 mJ
Ruichips Semiconductor Co., Ltd
Rev. A– Feb., 2014
1
www.ruichips.com
1 page RU1Z120R
Typical Characteristics
Output Characteristics
150
10V
120
8V
90 6V
60 4V
30 3V
0
01234
VDS - Drain-Source Voltage (V)
5
Drain-Source On Resistance
2.5
VGS=10V
ID=60A
2.0
1.5
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=11mΩ
-25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
175
Capacitance
6000
5400
Frequency=1.0MHz
4800
4200
Ciss
3600
3000
2400
1800
1200
Coss
600 Crs
0s
1 10 100
VDS - Drain-Source Voltage (V)
1000
Ruichips Semiconductor Co., Ltd
Rev. A– Feb., 2014
5
30
25
20
15
10
5
0
0
100
10
1
Drain-Source On Resistance
VGS=10V
30 60 90
ID - Drain Current (A)
120
Source-Drain Diode Forward
TJ=175°C
TJ=25°C
0.1
0.2
0.4 0.6 0.8 1 1.2
VSD - Source-Drain Voltage (V)
1.4
Gate Charge
10
9 VDS=120V
8 IDS=60A
7
6
5
4
3
2
1
0
0 20 40 60 80
QG - Gate Charge (nC)
100
www.ruichips.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RU1Z120R.PDF ] |
Número de pieza | Descripción | Fabricantes |
RU1Z120R | N-Channel Advanced Power MOSFET | Ruichips |
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