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PDF RU20P18L Data sheet ( Hoja de datos )

Número de pieza RU20P18L
Descripción P-Channel Advanced Power MOSFET
Fabricantes Ruichips 
Logotipo Ruichips Logotipo



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No Preview Available ! RU20P18L Hoja de datos, Descripción, Manual

RU20P18L
P-Channel Advanced Power MOSFET
Features
• -20V/-18A,
RDS (ON) =30mΩ(Typ.)@VGS=-4.5V
RDS (ON) =45mΩ(Typ.)@VGS=-2.5V
• Low On-Resistance
• Super High Dense Cell Design
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Load Switch
• Power Management
Pin Description
D
G
S
TO252
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
ID
Continuous Drain Current(VGS=-10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
S
P-Channel MOSFET
Rating
Unit
TC=25°C
-20
±12
175
-55 to 175
-18
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
-72 A
-18
A
-13
30
W
15
5 °C/W
100 °C/W
56 mJ
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
1
www.ruichips.com

1 page




RU20P18L pdf
RU20P18L
Typical Characteristics
Output Characteristics
50
40
-4.5V
30
20
-4V
-2.5V
10
-1V
0
01234
-VDS - Drain-Source Voltage (V)
5
Drain-Source On Resistance
2.5
VGS=-4.5V
IDS=-9A
2.0
1.5
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=30mΩ
-25 0 25 50 75 100 125
TJ - Junction Temperature (°C)
150
Capacitance
1000
Frequency=1.0MHz
800
600 Ciss
400
200
Coss
Crss
0
1
10
100
-VDS - Drain-Source Voltage (V)
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
5
Drain-Source On Resistance
150
120
90
-2.5V
60
30
0
0
100
-4.5V
10 20 30 40
-ID - Drain Current (A)
50
Source-Drain Diode Forward
10
TJ=175°C
TJ=25°C
1
0.1
0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD - Source-Drain Voltage (V)
Gate Charge
10
9 VDS=-16V
IDS=-9A
8
7
6
5
4
3
2
1
0
0246
QG - Gate Charge (nC)
8
www.ruichips.com

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