DataSheet.es    


PDF RU20T8M7 Data sheet ( Hoja de datos )

Número de pieza RU20T8M7
Descripción N-Channel Advanced Power MOSFET
Fabricantes Ruichips 
Logotipo Ruichips Logotipo



Hay una vista previa y un enlace de descarga de RU20T8M7 (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! RU20T8M7 Hoja de datos, Descripción, Manual

RU20T8M7
N-Channel Advanced Power MOSFET
Features
• 20V/8A,
RDS (ON) =13mΩ(Typ.)@VGS=4.5V
RDS (ON) =14mΩ(Typ.)@VGS=4V
RDS (ON) =16mΩ(Typ.)@VGS=3.1V
RDS (ON) =18mΩ(Typ.)@VGS=2.5V
• Super High Dense Cell Design
• Fast Switching Speed
• ESD Protected
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• DC-DC Converters
• Power Management
Pin Description
G2S2S2
D1/D2
PIN1
G1S1S1 PIN1
SDFN2050
D1
D2
G1 G2
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
Continuous Drain Current@TC(VGS=4.5V)
ID
Continuous Drain Current@TA(VGS=4.5V)
Maximum Power Dissipation@TC
PD
Maximum Power Dissipation@TA
S1 S2
Dual N-Channel MOSFET
Rating
Unit
TC=25°C
20
±10
150
-55 to 150
28
V
°C
°C
A
TC=25°C
60 A
TC=25°C
28
TC=100°C
18
A
TA=25°C
8
TA=70°C
6.4
TC=25°C
25
TC=100°C
10
W
TA=25°C
1.7
TA=70°C
1.1
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
1
www.ruichips.com

1 page




RU20T8M7 pdf
RU20T8M7
Typical Characteristics
Output Characteristics
150
4V
4.5V
120
3.1V
90
60 2.5V
30
1V
0
01234
VDS - Drain-Source Voltage (V)
5
Drain-Source On Resistance
2.5
VGS=4.5V
ID=8A
2.0
1.5
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=13mΩ
-25 0 25 50 75 100 125
TJ - Junction Temperature (°C)
150
Capacitance
1500
1200
Frequency=1.0MHz
900 Ciss
600
300 Coss
Crss
0
1
10
VDS - Drain-Source Voltage (V)
100
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
5
30
25
20
15
10
5
0
0
100
Drain-Source On Resistance
2.5V
3.1V
4V
4.5V
2468
ID - Drain Current (A)
10
Source-Drain Diode Forward
10
TJ=150°C
1
TJ=25°C
0.1
0.2
0.4 0.6 0.8 1 1.2
VSD - Source-Drain Voltage (V)
1.4
10
9 VDS=16V
IDS=8A
8
Gate Charge
7
6
5
4
3
2
1
0
0
5 10
QG - Gate Charge (nC)
15
www.ruichips.com

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet RU20T8M7.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
RU20T8M7N-Channel Advanced Power MOSFETRuichips
Ruichips

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar