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PDF RU2HE2D Data sheet ( Hoja de datos )
| Número de pieza | RU2HE2D | |
| Descripción | N-Channel Advanced Power MOSFET | |
| Fabricantes | Ruichips | |
| Logotipo |  |
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RU2HE2D
N-Channel Advanced Power MOSFET
MOSFET
Features
• 200V/1.2A,
RDS (ON) =0.95Ω (Typ.) @ VGS=10V
RDS (ON) =1Ω (Typ.) @ VGS=4.5V
• ESD Protected
• Reliable and Rugged
• Fast Switching
• Lead Free and Green Available
Pin Description
SOT-223
Applications
• Power Management
• DC-DC Converter
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
TA=25°C
ID Continuous Drain Current
TA=25°C
TA=70°C
PD
②
RθJA
Maximum Power Dissipation
TA=25°C
TA=70°C
Thermal Resistance-Junction to Ambient
Rating
200
±20
150
-55 to 150
1
4.5
①
1.2
0.9
2.5
1.6
50
Unit
V
°C
°C
A
A
A
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B – JUL., 2011
www.ruichips.com
1 page  
Typical Characteristics
Drain-Source On Resistance
RU2HE2D
Source-Drain Diode Forward
Tj - Junction Temperature (°C)
Capacitance
VSD - Source-Drain Voltage (V)
Gate Charge
VDS - Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B – JUL., 2011
5
QG - Gate Charge (nC)
www.ruichips.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RU2HE2D.PDF ] | |
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