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PDF BZT52B56 Data sheet ( Hoja de datos )
| Número de pieza | BZT52B56 | |
| Descripción | Small Signal Zener Diodes | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
BZT52-Series
Vishay Semiconductors
Small Signal Zener Diodes
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom.
Test current IZT
VZ specification
Int. construction
2.4 to 75
2.5; 5
Pulse current
Single
UNIT
V
mA
FEATURES
• Silicon planar Zener diodes
• The Zener voltages are graded according to the
international E24 standard
• AEC-Q101 qualified
• ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
BZT52C2V4-E3-08 to BZT52C75-E3-08
BZT52B2V4-E3-08 to BZT52B75-E3-08
BZT52C2V4-HE3-08 to BZT52C75-HE3-08
BZT52-series
BZT52B2V4-HE3-08 to BZT52B75-HE3-08
BZT52C2V4-E3-18 to BZT52C75-E3-18
BZT52B2V4-E3-18 to BZT52B75-E3-18
BZT52C2V4-HE3-18 to BZT52C75-HE3-18
BZT52B2V4-HE3-18 to BZT52B75-HE3-18
TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
3000 (8 mm tape on 7" reel)
15 000/box
10 000 (8 mm tape on 13" reel)
10 000/box
PACKAGE
PACKAGE NAME
SOD-123
WEIGHT
10.3 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Power dissipation
Diode on ceramic substrate 0.7 mm; 5 mm2
pad areas
Diode on ceramic substrate 0.7 mm; 2.5 mm2
pad areas
Ptot
Ptot
Zener current
See table “Electrical Characteristics “
Thermal resistance junction to ambient air
Valid provided that electrodes are kept at
ambient temperature
RthJA
Junction temperature
Tj
Storage temperature range
Tstg
Operating temperature range
Top
VALUE
500
410
300
150
- 65 to + 150
- 55 to + 150
UNIT
mW
mW
K/W
°C
°C
°C
Rev. 1.8, 26-Feb-13
1 Document Number: 85760
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
Ω
100
7
5
4
Rzj 3
2
10
7
5
4
3
2
1
1
18122
2 3 45
TIZj
=
=
25 °C
5 mA
10 2 3 4 5 100 V
VZ
Fig. 7 - Dynamic Resistance vs. Zener Voltage
mV/°C
25
ΔVZ 20
ΔTj 15
10
5 mA
IZ = 1 mA
20 mA
5
0
-5
1
18135
2 3 45
10 2 3 4 5 100 V
VZ at IZ = 5 mA
V ≥ 27 V, I = 2 mA
Fig. 8 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
V
0.8
0.7 VZ at IZ = 5 mA
0.6
ΔVZ 0.5
0.4
0.3
0.2
0.1
0
-1
- 0.2
0
18124
20 40 60
25 15
10
8
7
6.2
5.9
5.6
5.1
3.6 4.7
80 100 120 140 C
Tj
Fig. 9 - Change of Zener Voltage vs. Junction Temperature
BZT52-Series
Vishay Semiconductors
mV/°C
100
ΔVZ 80
ΔTj
60
IZ = 5 mA
40
20
0
0
18136
20 40 60
80 100 V
VZ at IZ = 2 mA
Fig. 10 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
V
9
8
7
ΔVZ 6
5
4
3
2
1
0
-1
0
18158
20 40
VZ at IZ = 5 mA
51
43
36
IZ = 5 mA
60 80 100 120 140 °C
Tj
Fig. 11 - Change of Zener Voltage vs. Junction Temperature
V
1.6
1.4
1.2
ΔVZ 1.0
ΔVZ = rZth x IZ
IZ = 5 mA
VZ >= 56 V; IZ = 2.5 mA
0.8
0.6
0.4
0.2
0
- 0.2
- 0.4
1
18159
10
100 V
VZ at IZ = 5 mA
Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
Rev. 1.8, 26-Feb-13
5 Document Number: 85760
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BZT52B56.PDF ] | |
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