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Número de pieza | RU2H30S | |
Descripción | N-Channel Advanced Power MOSFET | |
Fabricantes | Ruichips | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RU2H30S (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! Features
• 200V/30A,
RDS (ON) =75mΩ(Typ.) @ VGS=10V
• Ultra Low On-Resistance
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Available
Applications
• Switching Application Systems
• UPS
RU2H30S
N-Channel Advanced Power MOSFET
Pin Description
D
G
S
TO220
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
200
±25
175
-55 to 175
30
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
120 A
30
A
23
176
W
88
0.85 °C/W
62.5 °C/W
81 mJ
Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2013
1
www.ruichips.com
1 page RU2H30S
Typical Characteristics
Output Characteristics
10
Vgs
8,9,10V
8
6 6V
Drain-Source On Resistance
150
120
10V
90
4 60
5V
2 30
0
01234
VDS - Drain-Source Voltage (V)
5
Drain-Source On Resistance
2.5
VGS=10V
IDS=17A
2.0
1.5
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=75mΩ
-25 0 25 50 75 100 125
TJ - Junction Temperature (°C)
150
Capacitance
3000
2500
2000
Frequency=1.0MHz
Ciss
1500
1000
Coss
500
Crss
0
1
10
100
VDS - Drain-Source Voltage (V)
1000
0
0 5 10 15 20 25 30
ID - Drain Current (A)
Source-Drain Diode Forward
10.00
1.00
0.10
TJ=175°C
TJ=25°C
0.01
0.2 0.4 0.6 0.8 1 1.2 1.4
VSD - Source-Drain Voltage (V)
Gate Charge
10
9 VDS=160V
IDS=30A
8
7
6
5
4
3
2
1
0
0
50 100
QG - Gate Charge (nC)
150
Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2013
5
www.ruichips.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RU2H30S.PDF ] |
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