DataSheet.es    


PDF RU6H2L Data sheet ( Hoja de datos )

Número de pieza RU6H2L
Descripción N-Channel Advanced Power MOSFET
Fabricantes Ruichips 
Logotipo Ruichips Logotipo



Hay una vista previa y un enlace de descarga de RU6H2L (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! RU6H2L Hoja de datos, Descripción, Manual

RU6H2L
N-Channel Advanced Power MOSFET
Features
• 600V/2A,
RDS (ON) =4000mΩ(Typ.)@VGS=10V
• Gate charge minimized
• Low Crss( Typ. 5pF)
• Extremely high dv/dt capability
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• High efficiency switch mode power supplies
• Lighting
Pin Description
D
G
S
TO252
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
600
±30
150
-55 to 150
2
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
8A
2
A
1.2
56
W
22
2.2 °C/W
100 °C/W
34 mJ
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
1
www.ruichips.com

1 page




RU6H2L pdf
RU6H2L
Typical Characteristics
Output Characteristics
3
10V 8V
2 6V
5V
1
3V
0
02468
VDS - Drain-Source Voltage (V)
10
Drain-Source On Resistance
2.5
VGS=10V
ID=1A
2.0
1.5
10000
8000
6000
4000
2000
0
0
10
1
Drain-Source On Resistance
10V
1234
ID - Drain Current (A)
5
Source-Drain Diode Forward
TJ=150°C
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=4000mΩ
-25 0 25 50 75 100 125
TJ - Junction Temperature (°C)
150
Capacitance
500
Frequency=1.0MHz
400
Ciss
300
200
100
Coss
Crss
0
1
10
100 1000
VDS - Drain-Source Voltage (V)
0.1 TJ=25°C
0.01
0.2
0.4 0.6 0.8 1 1.2
VSD - Source-Drain Voltage (V)
1.4
Gate Charge
10
9 VDS=480V
IDS=2A
8
7
6
5
4
3
2
1
0
02468
QG - Gate Charge (nC)
10
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
5
www.ruichips.com

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet RU6H2L.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
RU6H2KN-Channel Advanced Power MOSFETRuichips
Ruichips
RU6H2LN-Channel Advanced Power MOSFETRuichips
Ruichips
RU6H2RN-Channel Advanced Power MOSFETRuichips
Ruichips

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar