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L9610C 데이터시트 PDF




STMicroelectronics에서 제조한 전자 부품 L9610C은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 L9610C 기능
기능 PWM POWER MOS CONTROLLER
제조업체 STMicroelectronics
로고 STMicroelectronics 로고


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L9610C 데이터시트, 핀배열, 회로
L9610C
L9611C
PWM POWER MOS CONTROLLER
. HIGH EFFICIENCY DUE TO PWM CONTROL
AND POWERMOS DRIVER
. LOAD DUMP PROTECTION
. LOAD POWER LIMITATION
. EXTERNAL POWERMOS PROTECTION
. LIMITED OUTPUT VOLTAGE SLEW RATE
DE SCR I P TI O N
The L9610C/11C is a monolithic integrated circuit
working in PWM mode as controller of an external
powerMOS transistor in High Side Driver configura-
tion.
Features of the device include controlled slope of
the leading and trailing edge of the gate driving vol-
tage, linear current limiting with protection timer, set-
table switching frequencyfo, TTL compatible enable
function, protection status ouput pin. The device is
mounted in SO16 micropackage, and DIP16 pack-
age.
SO16
DIP 16
ORDERING NUMBERS: L9610C
L9611C
BLOCK DIAGRAM
November 1991
1/9
This is advanced information on a new product now in development or undergoing evaluation. Details are subject to change without notice.




L9610C pdf, 반도체, 판매, 대치품
L9610C - L9611C
ELECTRICAL CHARACTERISITCS (Tamb = – 40 °C to 85 °C ; 6 V < VS < 16 V unless otherwise specified)
Symbol
VS
Iq
VSC
VSH
VSL
VR
IR
VINL
KF
KS
KT
VSi
VGON
VGOFF
IIN
VENL
VENH
IEN
SR
VMONsat
Parameter
Operating Supply Voltage
Quiescent Current
Internal Supply Voltage Clamp
Supply Voltage High Threshold
Supply Voltage Low Threshold
Reference Voltage
Reference Current
Input Low Threshold
Oscillator Freq. Constant
Gate Voltage Slew Rate
Constant
Protection Time Delay Constant
Sense Input Volt.
Gate Driving Volt. above VS
Gate Voltage in OFF Condition
Input Current
Low Enable Voltage
High Enable Voltage
Enable Input Current
Slew Rate
Saturation Voltage (pin 12)
Test Conditions
IS = 200mA
VR 100mV
Note 1
Note 2
Note 3
VS = 16V
IG = 100 µA
Without CS
IMON = 2.5 mA
Min.
6
28
16
4
3.3
0.13
800
3
Typ.
2.5
32
18.5
5
3.5
0.15
5
Max.
16
6
36
21
6
3.7
1
0.2
2500
9
Unit
V
mA
V
V
V
V
mA
VIN/VR
nF/s
nFV/ms
0.12 0.44 ms/nF
80 100 120 mV
8 16 V
1.2 V
–5 –1
µA
0.8 V
2.0 V
2 µA
0.5 V/µs
1.5 V
Notes : 1. fo = KF/CF.
2. dVG/dt = Ks/Cs.
3. tprot = KT CT.
FUNCTIONAL DESCRIPTION
PULSE WIDTH COMPARATOR
A ground compatible comparator generates the
PWM signal which controls the gate of the external
powerMOS.
The slopes of the leading and trailing edges of the
gate driving signal are defined by the external ca-
pacitor CS according to :
dVG/dt = KS/CS
This feature allows to optimize the switching speed
for the power and RFI performance best suited for
the application.
The lower limit of the duty cycle is fixed at 15 % of
the ratio between the input and the reference vol-
tage (see fig. 1). Input voltages lower than this value
disable the internal oscillator signal and therefore
the gate driver.
GROUND COMPATIBLE TRIANGLE
OSCILLATOR
The triangle oscillator provides the switching fre-
quency fo set by the external capacitorCF according
to :
fo = KF/CF
If the pin PWL (power limitation) is connected to
ground and Vs is higher than the PWL threshold
voltage, the duty cycle and the fo frequency are re-
duced : this allows to transfer a costant power to the
load (see fig. 2).
TIMER AND PROTECTION LATCH
When an overcurrent occurs, the device starts
charging the external capacitor CT ; the protection
time is set according to :
tprot = KT . CT
4/12

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L9610C 전자부품, 판매, 대치품
Figure 3 : The Typical Waveforms for Short Circuit Current Condition.
L9610C - L9611C
7/12

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