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BZT55B11 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BZT55B11
기능 SILICON EPITAXIAL PLANAR ZENER DIODES
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BZT55B11 데이터시트, 핀배열, 회로
BZT55 Series
SILICON EPITAXIAL PLANAR ZENER DIODES
Features
• Very sharp reverse characteristic
• Low reverse current level
• Available with tighter tolerances
• Very high stability
• Low noise
LS-34
Applications
• Voltage stabilization
QuadroMELF
Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Power Dissipation
Z-Current
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
Thermal Resistance Junction to Ambient Air
On PC board 50 mm X 50 mm X 1.6 mm
Forward Voltage
at IF = 100 mA
Symbol
Ptot
IZ
Tj
TS
Value
500
Ptot / VZ
175
- 65 to + 175
Unit
mW
mA
OC
OC
Symbol
RthJA
VF
Max.
500
1.5
Unit
K/W
V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 12/01/2007




BZT55B11 pdf, 반도체, 판매, 대치품
BZT55 Series
Total power dissipation vs.
Ambient temperature
600
400
200
0
40 80
120 160 200
Ambient temperature , C
Typical change of working voltage
under operating conditions at Ta=25 C
1000
100
Tj=25 C
Iz=5mA
10
1
05
10 15 20 25
Vz - Z-Voltage, V
Typical change of working voltage
vs. Junction temperature
1.3
VZtn=VZt/VZ(25 C)
1.2
TKVZ=10X10-4 /K
8X10-4 /K
1.1 6X10-4 /K
4X10-4 /K
2X10 -4 /K
1.0 0
-2X10-4 /K
-4X10 -4/K
0.9
0.8
-60
0 60 120 180
Junction temperature , C
240
Temperature coefficient
of Vz vs. Z-Voltage
15
10
5
Iz=5mA
0
-5
10 20 30 40 50
Vz - Z-Voltage, V
Capacitance vs. Z-Voltage
200
150
100
VR=2V
Tj=25 C
50
0 5 10 15 20 25
Vz - Z-Voltage, V
Forward current vs. Forward voltage
100
Tj=25 C
10
1
0.1
0.01
0.001
0
0.2 0.4 0.6 0.8
Forward voltage, V
1.0
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 12/01/2007

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