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PDF DM2G100SH6N Data sheet ( Hoja de datos )
| Número de pieza | DM2G100SH6N | |
| Descripción | High Power Rugged Type IGBT Module | |
| Fabricantes | Dawin Electronics | |
| Logotipo |  |
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May. 2009
High Power Rugged Type IGBT Module
DM2G100SH6N
Description
DAWIN’S IGBT module devices are optimized to reduce losses
and switching noise in high frequency power conditioning electrical systems.
These IGBT modules are ideally suited for power inverters, motors drives
and other applications where switching losses are significant portion of the
total losses.
Features
☞ High Speed Switching
☞ BVCES = 600V
☞ Low Conduction Loss : VCE(sat) = 2.1 V (typ.)
☞ Fast & Soft Anti-Parallel FWD
☞ Short circuit rated : Min.10uS at TC=100℃
☞ Reduced EMI and RFI
☞ Isolation Type Package
Equivalent Circuit and Package
Equivalent Circuit
①②
6
7
③
5
4
Package : 7DM-1 Series
Applications
Motor Drives, High Power Inverters, Welding Machine,
Induction Heating, UPS , CVCF, Robotics , Servo Controls,
High Speed SMPS
Absolute Maximum Ratings @ Tj=25℃(Per Leg)
Please see the package out line information
Symbol
Parameter
Conditions
Ratings
Unit
VCES Collector-Emitter Voltage
VGES Gate-Emitter Voltage
IC Collector Current
ICM (1)
Pulsed Collector Current
IF Diode Continuous Forward Current
IFM Diode Maximum Forward Current
TSC Short Circuit Withstand Time
PD Maximum Power Dissipation
Tj Operating Junction Temperature
Tstg Storage Temperature Range
Viso Isolation Voltage
Mounting screw Torque :M6
Power terminals screw Torque :M5
-
-
TC = 25℃
TC = 75℃
-
TC = 100℃
-
TC = 100℃
TC = 25℃
-
-
AC 1 minute
-
-
Note : (1) Repetitive rating : Pulse width limited by max. junction temperature
Copyright@Dawin Electronics Corp. All right reserved
1/7
600
±20
125
100
200
100
200
10
480
-40 ~ 150
-40 ~ 125
2500
4.0
2.0
V
V
A
A
A
A
A
uS
W
℃
℃
V
N.m
N.m
1 page  
May. 2009
DM2G100SH6N
16000
14000
12000
Cies
10000
Cies
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VTVTCGCG=E=E=2=25050℃V℃V,,ff==11MMHHZZ
8000
6000
4000
2000
Coes
Cres
0
0 .1
Coes
Cres
1
10
Collector – Emitter Voltage, VCE [V]
Fig 7. Capacitance characteristics
100
1
℃
0 .1
15 Common Emitter
RL = 2.4Ω
12 TC = 25℃
9 TBD
6 VCC = 100V
3
300V
200V
0
0 100 200 300 400
Gate Charge, Qg [nc]
Fig 8. Gate Charge Characteristics
500
1000
100
0 .01
0.001
1.E-05
1.E-04
1.E-03
1 .E-0 2
IGBT :
DIODE :
TC=25℃
1 .E-0 1
1.E+00
1.E+01
Rectangular Pulse Duration [sec]
Fig 9. Transient Thermal Impedance
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
0
100 200 300 400 500 600
Collector-Emitter Voltage, VCE [V]
Fig 11. SCSOA Characteristic
700
10
Single Non-repetitive
Pulse Tjj≤125℃
VGGEE= 15V
RGG = 168.8ΩΩ
1
0 100 200 300 400 500 600
Collector-Emitter Voltage, VCE [V]
Fig 10. RBSOA Characteristic
700
150
TJ ≤ 150℃
VGE ≥15V
120
90
60
30
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc [ ℃ ]
Fig 12. rated Current vs. Case Temperature
Copyright@Dawin Electronics Corp. All right reserved
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DM2G100SH6N.PDF ] | |
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