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Datasheet SSH70N10A Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | SSH70N10A | Advanced Power MOSFET Advanced Power MOSFET
SSH70N10A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175ΟC Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.018 Ω (Typ.)
Absolute Ma | Fairchild Semiconductor | mosfet |
SSH Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | SSH10N60A | BV(dss): 600V / R(ds): 0.8Ohm / I(d): 10A / advanced power MOSFET Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.)
SSH10N60A
BVDSS = 600 V RDS(on) = 0.8 Ω ID = 10 A
TO- Fairchild mosfet | | |
2 | SSH10N60B | 600V N-Channel MOSFET SSH10N60B
November 2001
SSH10N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, Fairchild mosfet | | |
3 | SSH10N70 | N-Channel Power MOSFETs Samsung mosfet | | |
4 | SSH10N80 | (SSH10N70 / SSH10N80) N-Channel Power MOSFETs Samsung mosfet | | |
5 | SSH10N80A | Advanced Power MOSFET Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGS EAS IA Samsung mosfet | | |
6 | SSH10N80A | N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET
FEATURES
• Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA (Max.) @ VDS = 800V • Lower RDS(ON): 0.746Ω (Typ.)
ABSOLUTE MAXIMUM RATINGS
S Fairchild Semiconductor mosfet | | |
7 | SSH10N90A | Advanced Power MOSFET Samsung Electronics mosfet | |
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