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PDF 2SD965A Data sheet ( Hoja de datos )
| Número de pieza | 2SD965A | |
| Descripción | NPN Transistors | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
NPN Transistors
2SD965A
Transistors
■ Features
● Audio amplifier
● Flash unit of camera
● Switching circuit
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
40
30
7
5
750
167
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 10 V , IE= 0
IEBO VEB= 7V , IC=0
VCE(sat) IC=3 A, IB=100mA
VBE(sat) IC=3 A, IB=100mA
hFE(1) VCE= 2V, IC= 1mA
hFE(2) VCE= 2V, IC= 500mA
hFE(3) VCE= 2V, IC= 2A
Cob VCB= 20V, IE= 0,f=1MHz
fT VCE= 6V, IC= 50mA
■ Classification of hfe(2)
Type
2SD965A-Q
Range
230-380
Marking
965AQ
2SD965A-R
340-600
965AR
2SD965A-S
560-800
965AS
2SD965A-T
560-950
965AT
1.Base
2.Collector
3.Emitter
Unit
V
A
mW
℃/W
℃
Min Typ Max Unit
40 V
30
7
100 nA
100
1V
1.2
200
230 950
150
50 pF
150 MHz
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