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Datasheet BZX84B4V3 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BZX84B4V3 | Zener Diode, Rectifier JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BZX84B2V4-BZX84B39 ZENER DIODES
FEATURES z Planar Die Construction z 300mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power Dissipation
SOT-23
MAXMUM RATINGS(Ta=25℃ u | JCET | diode |
2 | BZX84B4V3 | Zener Diodes MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
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Features
Planar Die construction 350mW Power Dissipation Zener Voltages from 2.4V - 51V Ideally Suited for Automated Assembly Processes
BZX84C2V4 | MCC | diode |
3 | BZX84B4V3 | Surface mount Silicon Planar Zener Diodes BZX84B2V4 ... BZX84B47 (300 mW)
BZX84B2V4 ... BZX84B47 (300 mW)
Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage
Version 2014-01-03
Power dissipation – Verlustleistung
2.9 ±0.1 0.4
3
Type Code
1
1.9
2
1.1
2.5 max 1.3 ±0.1
Repetitive pea | Diotec | diode |
4 | BZX84B4V3 | Silicon Zener Diode, Rectifier BZX84B…Series
SILICON PLANAR ZENER DIODES
This series of Zener diodes is offered in the convenient, surface mount plastic SOT-23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand he | SEMTECH | diode |
5 | BZX84B4V3 | 350mW SURFACE MOUNT PRECISION ZENER DIODE Features
2% Tolerance on VZ 350mW Power Dissipation Zener Voltages from 2.7V - 39V Ideally Suited for Automated Assembly Processes Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standa | Diodes | diode |
BZX Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BZX10 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
2 | BZX10 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
3 | BZX11 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
4 | BZX11 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
5 | BZX12 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
6 | BZX12 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
7 | BZX13 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | |
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