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PDF RQK0201QGDQA Data sheet ( Hoja de datos )

Número de pieza RQK0201QGDQA
Descripción Silicon N-Channel MOS FET
Fabricantes Renesas 
Logotipo Renesas Logotipo



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RQK0201QGDQA
Silicon N Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 25 mΩ typ (VGS = 4.5 V, ID = 2.4 A)
Low drive current
High speed switching
2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
Note: Marking is “QG”.
Preliminary Datasheet
R07DS0301EJ0500
Rev.5.00
Jan 10, 2014
3
D
G 1. Source
2 2. Gate
3. Drain
S
1
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
ID(pulse) Note1
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 μs, duty cycle 1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Ratings
20
±12
4.5
15
4.5
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
R07DS0301EJ0500 Rev.5.00
Jan 10, 2014
Page 1 of 7

1 page




RQK0201QGDQA pdf
RQK0201QGDQA
Dynamic Input Characteristics
40 16
30
20 VDD = 20 V
10 V
5 V 12
10 V
VDD = 20 V
8
VGS
10 5 V
0 VDS
0 24
ID = 4.5 A
Tc = 25°C
4
0
6 8 10
Gate Charge Qg (nc)
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100 Coss
Crss
VGS = 0 V
f = 1 MHz
10
05
10
15 20
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
15
10 V
12
5V
Pulse Test
Tc = 25°C
9
6
3 –5, –10 V
0 VGS = 0 V
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Preliminary
Switching Characteristics
1000
100
VDD = 10 V
VGS = 4.5 V
Rg = 4.7 Ω
PW = 5 μs
Tc = 25°C
tr
td(off)
td(on)
10
tf
1
0.1 1 10 100
Drain Current ID (A)
Input Capacitance vs.
Gate to Source Voltage
900
850
800
750
700
650 VDS = 0 V
f = 1 MHz
600
10 8 6 4 2 0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
0.6
VGS = 0
0.5
0.4 ID = 10 mA
0.3
1 mA
0.2
25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0301EJ0500 Rev.5.00
Jan 10, 2014
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