|
|
PDF RQK0601AGDQS Data sheet ( Hoja de datos )
| Número de pieza | RQK0601AGDQS | |
| Descripción | Silicon N-Channel MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de RQK0601AGDQS (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
RQK0601AGDQS
Silicon N Channel MOS FET
Power Switching
Features
• Low on-resistance
RDS(on) = 56 mΩ typ (VGS = 10 V, ID = 2.5 A)
• Low drive current
• High speed switching
• 4.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK R )
1
2
3
4
Note: Marking is “AG”.
REJ03G0575-0400
Rev.4.00
Jun 22, 2006
2, 4
D
1. Gate
1 G 2. Drain
3. Source
4. Drain
S
3
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID
Note1
(pulse)
Body - drain diode reverse drain current
Channel dissipation
Channel dissipation
IDR
Pch Note2
Pch
Note1
(pulse)
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 1 s, duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Ratings
60
±20
5
7.3
5
1.5
5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Rev.4.00 Jun 22, 2006 page 1 of 6
1 page  
RQK0601AGDQS
Dynamic Input Characteristics
100
ID = 5.0 A
Tc = 25°C
80
VDD = 10 V
25 V
60 VDS
50 V
16
VGS 12
8
40
20
VDD = 50 V
4
25 V
10 V
0
0
0 4 8 12 16
Gate Charge Qg (nC)
Typical Capacitance vs.
Drain to Source Voltage
10000
VGS = 0 V
f = 1 MHz
1000
Ciss
100
Coss
Crss
10
0
20 40
60
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
5
4
5V
Pulse Test
Tc = 25°C
3
2 VGS = 10 V
1
–10 V
0 V, –5 V
0
0 0.4 0.8 1.2 1.6 2.0
Source Drain Voltage VSD (V)
Switching Characteristics
1000
tf
100
VDD = 10 V
VGS = 10 V
Rg = 4.7 Ω
PW = 5 µs
Tc = 25°C
td(off)
td(on)
10
tr
1
0.01
0.1
1.0
10
Drain Current ID (A)
Input Capacitance vs.
Gate to Source Voltage
1000
900
800
700
600
VDS = 0 V
f = 1 MHz
500
–10 –5
0
5 10
Gate to Source Voltage VGS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
0.8
VGS = 0
0.7
0.6
0.5 ID = 10 mA
0.4
0.3 1 mA
0.2
0.1
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Rev.4.00 Jun 22, 2006 page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RQK0601AGDQS.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| RQK0601AGDQS | Silicon N-Channel MOS FET | Renesas |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |