DataSheet.es    


PDF RQK0603CGDQS Data sheet ( Hoja de datos )

Número de pieza RQK0603CGDQS
Descripción Silicon N-Channel MOS FET
Fabricantes Renesas 
Logotipo Renesas Logotipo



Hay una vista previa y un enlace de descarga de RQK0603CGDQS (archivo pdf) en la parte inferior de esta página.


Total 7 Páginas

No Preview Available ! RQK0603CGDQS Hoja de datos, Descripción, Manual

RQK0603CGDQS
Silicon N Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 205 mtyp (VGS = 10 V, ID = 1.4 A)
Low drive current
High speed switching
4.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK R )
1
2
3
4
Note: Marking is “CG”.
REJ03G0577-0400
Rev.4.00
Jun 22, 2006
2, 4
D
1. Gate
1 G 2. Drain
3. Source
4. Drain
S
3
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID
Note1
(pulse)
Body - drain diode reverse drain current
Channel dissipation
Channel dissipation
IDR
Pch Note2
Pch
Note1
(pulse)
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 1 s, duty cycle 1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Ratings
60
±20
2.8
4.1
2.8
1.5
5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Rev.4.00 Jun 22, 2006 page 1 of 6

1 page




RQK0603CGDQS pdf
RQK0603CGDQS
Dynamic Input Characteristics
100
ID = 2.8 A
Tc = 25°C
80
20
16
VDD = 10 V
60
VDS
40
25 V
50 V
12
VGS
8
20
VDD = 50 V
4
25 V
10 V
0
0
0 0.8 1.6 2.4 3.2 4.0
Gate Charge Qg (nC)
Typical Capacitance vs.
Drain to Source Voltage
1000
VGS = 0 V
f = 1 MHz
100
Ciss
Coss
10
Crss
1
0 5 10 15 20 25 30
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
3.0
2.5 10 V
Pulse Test
Tc = 25°C
2.0
1.5 5 V
1.0
0.5
VGS = 0 V, –5 V–10 V
0
0 0.4 0.8 1.2 1.6 2.0
Source Drain Voltage VSD (V)
Switching Characteristics
1000
100
10
VDD = 10 V
VGS = 10 V
Rg = 4.7
PW = 5 µs
Tc = 25°C
td(off)
tf
tr
td(on)
1
0.01
0.1
1.0
10
Drain Current ID (A)
Input Capacitance vs.
Gate to Source Voltage
220
210
200
190
180
170
160 VDS = 0 V
f = 1 MHz
150
–10 –5
0
5 10
Gate to Source Voltage VGS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
0.8
VGS = 0
0.7
0.6 ID = 10 mA
0.5
0.4 1 mA
0.3
0.2
0.1
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Rev.4.00 Jun 22, 2006 page 5 of 6

5 Page










PáginasTotal 7 Páginas
PDF Descargar[ Datasheet RQK0603CGDQS.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
RQK0603CGDQASilicon N-Channel MOS FETRenesas
Renesas
RQK0603CGDQSSilicon N-Channel MOS FETRenesas
Renesas

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar