|
|
Número de pieza | RQK0607AQDQS | |
Descripción | Silicon N-Channel MOS FET | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RQK0607AQDQS (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! RQK0607AQDQS
Silicon N Channel MOS FET
Power Switching
Features
• Low on-resistance
RDS(on) = 210 mΩ typ.(at VGS = 4.5 V, ID = 1.2 A)
• Low drive current
• High speed switching
• VDSS : 60 V and capable of 2.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK R )
1
2
3
4
1G
Note: Marking is “AQ“.
REJ03G1620-0100
Rev.1.00
Mar 03, 2008
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
ID(pulse) Note1
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
Ratings
60
±12
2.4
8
2.4
1.5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
REJ03G1620-0100 Rev.1.00 Mar 03, 2008
Page 1 of 7
1 page RQK0607AQDQS
Dynamic Input Characteristics
80 16
VDD = 10 V
25 V
60 50 V
ID = 2.4 A
Tc = 25°C 12
40 8
VDD = 50 V
20
25 V
10 V
4
00
0 2 4 6 8 10
Gate Charge Qg (nC)
Typical Capacitance vs.
Drain to Source Voltage
1000
VGS = 0 V
f = 1 MHz
100
Ciss
Coss
10
Crss
1
0 10 20 30 40 50 60
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
10
Pulse Test
Tc = 25°C
8
6
10 V
4 4.5 V
2.5 V
2
0V
0 VGS = –2.5, –4.5, –10 V
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Switching Characteristics
10000
1000
VGS = 4.5 V, VDD = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
Tc = 25°C
tr
100
td(on)
10
td(off)
1
0.01 0.1
1
Drain Current ID (A)
tf
10
Input Capacitance vs.
Gate to Source Voltage
360
340
320
300
280
260
240
220
200
–10 –8 –6 –4 –2 0
VDS = 0
f = 1MHz
2 4 6 8 10
Gate to Source Voltage VGS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
0.7
VGS = 0
0.6
ID = 10 mA
0.5
0.4
0.3 1 mA
0.2
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
REJ03G1620-0100 Rev.1.00 Mar 03, 2008
Page 5 of 7
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RQK0607AQDQS.PDF ] |
Número de pieza | Descripción | Fabricantes |
RQK0607AQDQS | Silicon N-Channel MOS FET | Renesas |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |