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What is RQK0603CGDQA?

This electronic component, produced by the manufacturer "Renesas", performs the same function as "Silicon N-Channel MOS FET".


RQK0603CGDQA Datasheet PDF - Renesas

Part Number RQK0603CGDQA
Description Silicon N-Channel MOS FET
Manufacturers Renesas 
Logo Renesas Logo 


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RQK0603CGDQA
Silicon N Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 212 mΩ typ (VGS = 10 V, ID = 1 A)
Low drive current
High speed switching
4.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
Note: Marking is “CG”.
Preliminary Datasheet
R07DS0307EJ0600
Rev.6.00
Jan 10, 2014
3
D
G 1. Source
2 2. Gate
3. Drain
S
1
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
ID(Pulse) Note1
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 μs, duty cycle 1%
2. When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
Ratings
60
±20
2
5
2
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
R07DS0307EJ0600 Rev.6.00
Jan 10, 2014
Page 1 of 7

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RQK0603CGDQA equivalent
RQK0603CGDQA
Dynamic Input Characteristics
100
ID = 1.5 A
Tc = 25°C
80
60
VDS
40
20
VDD = 10 V 16
25 V
50 V
12
VGS
8
20
VDD = 50 V
4
25 V
10 V
00
0 0.8 1.6 2.4 3.2 4.0
Gate Charge Qg (nC)
Typical Capacitance vs.
Drain to Source Voltage
1000
VGS = 0 V
f = 1 MHz
Ciss
100
Coss
10
Crss
1
0 10 20 30 40 50 60
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
5
Pulse Test
Tc = 25°C
4
3 VGS = 10 V
2
1 5V
0 V, 5 V, –10 V
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Preliminary
1000
100
Switching Characteristics
td(off)
VDD = 10 V
VGS = 10 V
Rg = 4.7 Ω
PW = 5 μs
Tc = 25°C
tr
tf
10 td(on)
1
0.01 0.1
1
Drain Current ID (A)
10
Input Capacitance vs.
Gate to Source Voltage
220
VDS = 0 V
f = 1 MHz
200
180
160
140
–10
5
0
5 10
Gate to Source Voltage VGS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
0.8
VGS = 0
0.7
0.6
ID = 10 mA
0.5
0.4 1 mA
0.3
0.2
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0307EJ0600 Rev.6.00
Jan 10, 2014
Page 5 of 7


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for RQK0603CGDQA electronic component.


Information Total 8 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
RQK0603CGDQAThe function is Silicon N-Channel MOS FET. RenesasRenesas
RQK0603CGDQSThe function is Silicon N-Channel MOS FET. RenesasRenesas

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