|
|
PDF MTB08N04J3 Data sheet ( Hoja de datos )
| Número de pieza | MTB08N04J3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTB08N04J3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
CYStech Electronics Corp.
Spec. No. : C892J3
Issued Date : 2014.05.29
Revised Date :
Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
MTB08N04J3
BVDSS
ID @VGS=10V
RDS(ON)@VGS=10V, ID=15A
RDS(ON)@VGS=5V, ID=10A
40V
60A
5.4mΩ(typ)
9.0mΩ(typ)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB08N04J3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
MTB08N04J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB08N04J3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C892J3
Issued Date : 2014.05.29
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
NormalizedThreshold Voltage vs Junction Tempearture
1.4
1000
100
Ciss 1.2
1
C oss
0.8
Crss 0.6
ID=1mA
ID=250μ A
10
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
VDS=5V
Pulsed
Ta=25°C
0.01 0.1
1
10
ID, Drain Current(A)
100
Maximum Safe Operating Area
1000
RDS(ON)
100 Limited
10
100μ s
1ms
10ms
100ms
1s
1
TC=25°C, Tj=150°, VGS=10V
RθJC=2.5°C/W, Single Pulse
DC
0.1
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=20V
8 ID=20A
6
4
2
0
0 5 10 15 20 25 30 35 40
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
70
60
50
40
30
20
10 VGS=10V, RθJC=2.5°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTB08N04J3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB08N04J3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTB08N04J3 | N-Channel Enhancement Mode Power MOSFET | CYStech |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |