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PDF MTB4D0N03ATV8 Data sheet ( Hoja de datos )
| Número de pieza | MTB4D0N03ATV8 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB4D0N03ATV8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C441V8
Issued Date : 2014.05.22
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB4D0N03ATV8
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Dynamic dv/dt rating
Repetitive Avalanche Rated
Pb-free lead plating and halogen-free package
BVDSS
ID @ VGS=10V
VGS=10V, ID=15A
RDSON(TYP)
VGS=4.5V, ID=12A
30V
15A
4.7mΩ
6.7mΩ
Equivalent Circuit
MTB4D0N03ATV8
Outline
Pin 1
DFN3×3
G：Gate D：Drain S：Source
Ordering Information
Device
MTB4D0N03ATV8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB4D0N03ATV8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C441V8
Issued Date : 2014.05.22
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
Coss
Threshold Voltage vs Junction Tempearture
1.4
1.2
1 ID=1mA
0.8
100
Crss 0.6
ID=250μA
10
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
VDS=5V
Ta=25°C
Pulsed
0.01 0.1 1 10
ID, Drain Current(A)
100
Maximum Safe Operating Area
1000
RDSON
100 Limite
10
1
TA=25°C, Tj=150°C
0.1 VGS=10V, RθJA=50°C/W
Single Pulse
0.01
0.1
1 10
VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
1s
DC
100
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=15V
8
VDS=10V
6 VDS=5V
4
2
ID=15A
0
0 4 8 12 16 20 24 28 32
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
18
16
14
12
10
8
6
4
2 TA=25°C, VGS=10V, RθJA=50°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB4D0N03ATV8
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB4D0N03ATV8.PDF ] | |
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