MTB6D0N03ATH8 Datasheet PDF - CYStech
| Part Number | MTB6D0N03ATH8 | |
| Description | N-Channel Enhancement Mode Power MOSFET | |
| Manufacturers | CYStech | |
| Logo |  |
|
|
There is a preview and MTB6D0N03ATH8 download ( pdf file ) link at the bottom of this page. Total 9 Pages | ||
Preview 1 page No Preview Available !
CYStech Electronics Corp.
Spec. No. : C709H8
Issued Date : 2014.04.30
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB6D0N03ATH8
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free lead plating and Halogen-free package
BVDSS
ID
RDS(ON)@VGS=10V, ID=25A
RDS(ON)@VGS=4.5V, ID=20A
30V
56A
6.8 mΩ(typ)
10.4 mΩ(typ)
Symbol
MTB6D0N03ATH8
Outline
Pin 1
DFN5×6
G：Gate D：Drain S：Source
Ordering Information
Device
MTB6D0N03ATH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB6D0N03ATH8
CYStek Product Specification
|
| |
 
CYStech Electronics Corp.
Spec. No. : C709H8
Issued Date : 2014.04.30
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
Ciss
C oss
100
Crss
f=1MHz
10
0.1 1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
1000
VDS=5V
Pulsed
Ta=25°C
0.01 0.1
1
ID, Drain Current(A)
Maximum Safe Operating Area
10
RDS(ON) Limit
100
10
1 TC=25°C, Tj=150°C
VGS=10V,RθJC=2.5°C/W
Single Pulse
0.1
0.1
1 10
VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100m
1s
DC
100
1.2
ID=1mA
1
0.8
0.6 ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=15V
8 VDS=10V
6 VDS=5V
4
2
ID=25A
0
0 3 6 9 12 15
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
70
60
50
40
30
20
VGS=10V, RθJC=2.5°C/W
10
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTB6D0N03ATH8
CYStek Product Specification
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for MTB6D0N03ATH8 electronic component. |
| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ MTB6D0N03ATH8.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| MTB6D0N03ATH8 | The function is N-Channel Enhancement Mode Power MOSFET. CYStech | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
MTB6
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||