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PDF MTB6D0N03BH8 Data sheet ( Hoja de datos )
| Número de pieza | MTB6D0N03BH8 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB6D0N03BH8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : CA00H8
Issued Date : 2015.02.13
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB6D0N03BH8
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free lead plating and Halogen-free package
BVDSS
ID
RDS(ON)@VGS=10V, ID=25A
RDS(ON)@VGS=4.5V, ID=20A
30V
56A
6.4 mΩ(typ)
10.4 mΩ(typ)
Symbol
MTB6D0N03BH8
Outline
Pin 1
DFN5×6
G：Gate D：Drain S：Source
Ordering Information
Device
MTB6D0N03BH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB6D0N03BH8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : CA00H8
Issued Date : 2015.02.13
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
Ciss
C oss
100
10
0.1
f=1MHz
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
1.2
ID=1mA
1
0.8
0.6 ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
10
1
0.1
0.01
0.001
1000
VDS=5V
Pulsed
Ta=25°C
0.01 0.1 1 10
ID, Drain Current(A)
Maximum Safe Operating Area
100
RDS(ON) Limit
100
10
1 TC=25°C, Tj=150°C
VGS=10V,RθJC=2.5°C/W
Single Pulse
0.1
0.1
1 10
VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100m
1s
DC
100
8
6
4
2 VDS=15V
ID=14A
0
0 4 8 12 16
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
70
60
50
40
30
20
VGS=10V, RθJC=2.5°C/W
10
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTB6D0N03BH8
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB6D0N03BH8.PDF ] | |
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