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PDF MTBA6C12J4 Data sheet ( Hoja de datos )
| Número de pieza | MTBA6C12J4 | |
| Descripción | N & P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C973J4
Issued Date : 2014.06.13
Revised Date : 2014.10.02
Page No. : 1/13
N & P-Channel Enhancement Mode Power MOSFET
MTBA6C12J4
BVDSS
ID @ VGS=10V(-10V)
RDSON(typ.) @VGS=(-)10V
Features
RDSON(typ.) @VGS=(-)4.5V
• Low Gate Charge
• Simple Drive Requirement
• RoHS compliant & Halogen-free package
N-CH
120V
2A
176 mΩ
183 mΩ
P-CH
-120V
-1.6A
246 mΩ
276 mΩ
Equivalent Circuit
MTBA6C12J4
Outline
TO-252-4L
G：Gate D：Drain
S：Source
Absolute Maximum Ratings (TA=25°C, unless otherwise noted)
Parameter
Symbol
Limits
N-channel P-channel
Drain-Source Voltage
VDS 120
-120
Gate-Source Voltage
VGS ±20
±20
Continuous Drain Current @ TC=25°C, VGS=10V(-10V) (Note1)
8.0 -6.8
Continuous Drain Current @ TC=100°C, VGS=10V(-10V) (Note1)
Continuous Drain Current @ TA=25°C, VGS=10V(-10V) (Note4)
ID
5.6
2.0
-4.8
-1.6
Continuous Drain Current @ TA=70°C, VGS=10V(-10V) (Note4)
1.6 -1.3
Pulsed Drain Current *1
(Note3) IDM
10
-8
Total Power Dissipation (TC=25℃)
Total Power Dissipation (TC=100℃)
(Note1)
(Note1)
PD
25
12.5
Total Power Dissipation (TA=25℃)
Total Power Dissipation (TA=70℃)
(Note2)
(Note2)
PDSM
2.4
1.7
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+175
Unit
V
A
W
°C
MTBA6C12J4
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C973J4
Issued Date : 2014.06.13
Revised Date : 2014.10.02
Page No. : 5/13
Q1, N-CH Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
1.4
Threshold Voltage vs Junction Tempearture
Ciss 1.2
1
100 C oss
0.8
ID=1mA
10
0.1
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
100
VDS=10V
Pulsed
Ta=25°C
0.01 0.1
1
ID, Drain Current(A)
Maximum Safe Operating Area
10
0.6 ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=96V
8
VDS=60V
6
4
2
ID=2A
0
0 2 4 6 8 10
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
2.5
10 RDS(ON)
Limit
100μ s
1
1ms
10ms
0.1 100ms
TA=25°C, Tj=150°C, VGS=10V
RθJA=90°C/W,Single Pulse
0.01
1s
DC
0.1 1 10 100
VDS, Drain-Source Voltage(V)
1000
2
1.5
1
0.5 TA=25°C, Tj(max)=150°C,VGS=10V
RθJA=90°C/W
0
25 50 75 100 125 150
TJ, Junction Temperature(°C)
175
MTBA6C12J4
CYStek Product Specification
5 Page 
CYStech Electronics Corp.
Recommended soldering footprint
Spec. No. : C973J4
Issued Date : 2014.06.13
Revised Date : 2014.10.02
Page No. : 11/13
Unit : mm
MTBA6C12J4
CYStek Product Specification
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet MTBA6C12J4.PDF ] | |
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