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Número de pieza | MTBA0N10Q8 | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | CYStech | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTBA0N10Q8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C790Q8
Issued Date : 2010.07.23
Revised Date : 2012.05.07
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTBA0N10Q8 BVDSS
ID
RDS(ON)@VGS=10V, ID=5A
RDS(ON)@VGS=4.5V, ID=3A
100V
5A
90mΩ(typ)
94mΩ(typ)
Description
The MTBA0N10Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free and Halogen-free package
Symbol
MTBA0N10Q8
Outline
Pin 1
SOP-8
G:Gate
D:Drain
S:Source
MTBA0N10Q8
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C790Q8
Issued Date : 2010.07.23
Revised Date : 2012.05.07
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
Threshold Voltage vs Junction Tempearture
1.4
ID=250μA
1.2
1000 1
100 C oss
10
0.1
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
VDS=5V
10
VDS=10V
1
0.1
0.01
0.001
Ta=25°C
Pulsed
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
100
RDSON
10 Limited
1
0.1 TA=25°C, Tj=150°C
VGS=10V, RθJA=40°C/W
Single Pulse
0.01
0.1
1 10
VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
1s
DC
100
0.8
0.6
0.4
-60
10
8
6
-20 20
60 100
Tj, Junction Temperature(°C)
140
Gate Charge Characteristics
VDS=50V
VDS=20V
4
2 ID=5A
0
0 4 8 12 16 20 24
Qg, Total Gate Charge(nC)
Typical Transfer Characteristics
35
VDS=10V
30
25
20
15
10
5
0
024 68
Gate-Source Voltage-VGS(V)
10
MTBA0N10Q8
CYStek Product Specification
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet MTBA0N10Q8.PDF ] |
Número de pieza | Descripción | Fabricantes |
MTBA0N10Q8 | N-Channel Enhancement Mode Power MOSFET | CYStech |
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