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PDF MTBA5C10H8 Data sheet ( Hoja de datos )
| Número de pieza | MTBA5C10H8 | |
| Descripción | N & P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTBA5C10H8 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C744H8
Issued Date : 2015.03.27
Revised Date : 2015.03.30
Page No. : 1/13
N- AND P-Channel Enhancement Mode MOSFET
MTBA5C10H8 BVDSS
ID@VGS=10V(-10V), TA=25°C
ID@VGS=10V(-10V), TC=25°C
RDSON(typ)@VGS=10V(-10V)
RDSON(typ)@VGS=4.5V(-4.5V)
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
N-CH
100V
3.0A
8.6A
120mΩ
125mΩ
P-CH
-100V
-2.7A
-7.8A
170mΩ
180mΩ
Equivalent Circuit
MTBA5C10H8
Outline
Pin 1
DFN5×6
G：Gate S：Source D：Drain
Ordering Information
Device
MTBA5C10H8-0-T6-G
Package
Shipping
DFN 5 ×6
(Pb-free lead plating & halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBA5C10H8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C744H8
Issued Date : 2015.03.27
Revised Date : 2015.03.30
Page No. : 5/13
Typical Characteristics : Q1( N-channel )
Typical Output Characteristics
12
1.4
Brekdown Voltage vs Ambient Temperature
10
8
6
4
2
0
0
10V, 9V, 8V, 7V, 6V, 5V, 4V
VGS=3V
1 23 4
VDS, Drain-Source Voltage(V)
5
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
10000
VGS=2.5V
1000
VGS=3V
VGS=4.5V
VGS=10V
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
0.8
Tj=25°C
0.6
Tj=150°C
0.4
100
0.01
0.1 1 10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
300
280
260 ID=2.5A
240
220
200
180
160
140
120
100
0
24 68
VGS, Gate-Source Voltage(V)
10
0.2
0
2 46 8
IDR, Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2 VGS=10V, ID=2.5A
1.6
1.2
0.8
RDSON@Tj=25°C : 120mΩ typ
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTBA5C10H8
CYStek Product Specification
5 Page 
Reel Dimension
CYStech Electronics Corp.
Spec. No. : C744H8
Issued Date : 2015.03.27
Revised Date : 2015.03.30
Page No. : 11/13
Carrier Tape Dimension
MTBA5C10H8
CYStek Product Specification
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet MTBA5C10H8.PDF ] | |
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