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PDF MTBA5C10V8 Data sheet ( Hoja de datos )
| Número de pieza | MTBA5C10V8 | |
| Descripción | N & P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C744V8
Issued Date : 2014.11.03
Revised Date :
Page No. : 1/13
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTBA5C10V8 BVDSS
N-CH
100V
ID@VGS=10V(-10V)
2.3A
RDSON@VGS=10V(-10V) typ. 126.5mΩ
RDSON@VGS=4.5V(-4.5V) typ. 130mΩ
P-CH
-100V
-1.7A
216mΩ
227mΩ
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTBA5C10V8
Outline
DFN3×3
G：Gate S：Source D：Drain
Pin 1
Ordering Information
Device
MTBA5C10V8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTBA5C10V8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C744V8
Issued Date : 2014.11.03
Revised Date :
Page No. : 5/13
Typical Characteristics : Q1( N-channel )
10
9
8
7
6
5
4
3
2
1
0
0
Typical Output Characteristics
10V, 9V, 8V, 7V, 6V, 5V, 4V
VGS=3V
1 23 4
VDS, Drain-Source Voltage(V)
5
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
10000
VGS=2.5V
1000
VGS=4.5V VGS=10V
VGS=3V
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
0.8
Tj=25°C
0.6 Tj=150°C
0.4
100
0.01
0.1 1 10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
400
ID=2.3A
350
300
250
200
150
100
0
24 68
VGS, Gate-Source Voltage(V)
10
0.2
0
2 46 8
IDR, Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
2.8
2.4 VGS=5V, ID=2A
RDSON@Tj=25°C : 130mΩ typ.
2
1.6
1.2
0.8 VGS=10V, ID=2.3A
RDSON@Tj=25°C : 126.5mΩ
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTBA5C10V8
CYStek Product Specification
5 Page 
Reel Dimension
CYStech Electronics Corp.
Spec. No. : C744V8
Issued Date : 2014.11.03
Revised Date :
Page No. : 11/13
Carrier Tape Dimension
MTBA5C10V8
CYStek Product Specification
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet MTBA5C10V8.PDF ] | |
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