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PDF MTBA5N10Q8 Data sheet ( Hoja de datos )
| Número de pieza | MTBA5N10Q8 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C731Q8
Issued Date : 2013.07.19
Revised Date :
Page No. : 1/9
N -Channel Logic Level Enhancement Mode Power MOSFET
MTBA5N10Q8 BVDSS
ID
RDSON(TYP)
VGS=10V, ID=3A
VGS=4.5V, ID=2A
100V
3A
123mΩ
130mΩ
Description
The MTBA5N10Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating package
Symbol
MTBA5N10Q8
Outline
Pin 1
SOP-8
G：Gate
D：Drain
S：Source
MTBA5N10Q8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C731Q8
Issued Date : 2013.07.19
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
NormalizedThreshold Voltage vs Junction Tempearture
1.4
ID=250μA
1.2
1000 1
100 C oss
10
0.1
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
10
1
0.8
0.6
0.4
-60
-20 20
60 100
Tj, Junction Temperature(°C)
140
Gate Charge Characteristics
10
VDS=50V
8 ID=3A
6
0.1
0.01
0.001
VDS=5V
Pulsed
Ta=25°C
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
100
RDS(ON)
10 Limit
1
100μs
1ms
10ms
100ms
0.1
TA=25°C, Tj=150°C, VGS=10V
RθJA=50°C/W, Single Pulse
1s
DC
0.01
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
4
2
0
0 5 10 15 20
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Junction Temperature
4.5
4
3.5
3
2.5
2
1.5
1
0.5 TA=25°C, VGS=10V, RθJA=50°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTBA5N10Q8
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTBA5N10Q8.PDF ] | |
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