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Número de pieza | MTBA5N10V8 | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | CYStech | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTBA5N10V8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C731V8
Issued Date : 2012.08.24
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTBA5N10V8 BVDSS
ID
RDSON(TYP)
VGS=10V, ID=5A
VGS=4.5V, ID=5A
100V
7A
133 mΩ
140 mΩ
Description
The MTBA5N10V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free lead plating and Halogen-free package
Equivalent Circuit
MTBA5N10V8
Outline
Pin 1
DFN3×3
G:Gate D:Drain S:Source
Ordering Information
Device
MTBA5N10V8-0-T1-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
MTBA5N10V8
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C731V8
Issued Date : 2012.08.24
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
NormalizedThreshold Voltage vs Junction Tempearture
1.4
ID=250μA
1.2
1000 1
100 C oss
10
0.1
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
10
1
0.1 VDS=5V
Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
100
RDS(ON
)
10
100μs
1 1ms
10ms
0.1
TA=25°C, Tj=150°, VGS=10V
RθJA=53°C/W, Single Pulse
100ms
1s
DC
0.01
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
0.8
0.6
0.4
-60
10
8
6
4
-20 20
60 100
Tj, Junction Temperature(°C)
140
Gate Charge Characteristics
VDS=80V
VDS=50V
VDS=20V
2
ID=7A
0
0 4 8 12 16 20 24
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
9
8
7
6
5
4
3
2
1 VGS=10V, RθJC=7°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTBA5N10V8
CYStek Product Specification
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet MTBA5N10V8.PDF ] |
Número de pieza | Descripción | Fabricantes |
MTBA5N10V8 | N-Channel Enhancement Mode Power MOSFET | CYStech |
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