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PDF MTBA6C12Q8 Data sheet ( Hoja de datos )
| Número de pieza | MTBA6C12Q8 | |
| Descripción | N & P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C973Q8
Issued Date : 2014.09.23
Revised Date :
Page No. : 1/12
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTBA6C12Q8
N-CH P-CH
BVDSS
120V -120V
ID @ VGS=10V(-10V)
2A -1.7A
RDSON(typ.) @VGS=(-)10V 178 mΩ 246 mΩ
RDSON(typ.) @VGS=(-)4.5V 185 mΩ 276 mΩ
Description
The MTBA6C12Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTBA6C12Q8
Outline
SOP-8
G：Gate S：Source D：Drain
Ordering Information
Device
MTBA6C12Q8-0-T3-G
Package
Shipping
SOP-8
(Pb-free lead plating & halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBA6C12Q8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C973Q8
Issued Date : 2014.09.23
Revised Date :
Page No. : 5/12
Typical Characteristics(Cont.) : Q1( N-channel)
Capacitance vs Drain-to-Source Voltage
1000
Threshold Voltage vs Junction Tempearture
1.4
Ciss 1.2
1
100 C oss
0.8
ID=1mA
10
0.1
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
100
VDS=10V
Pulsed
Ta=25°C
0.01 0.1
1
ID, Drain Current(A)
Maximum Safe Operating Area
10
0.6 ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=96V
8
VDS=60V
6
4
2
ID=2A
0
0 2 4 6 8 10
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
2.5
10 RDS(ON)
Limit
100μ s
1
1ms
10ms
0.1 100ms
TA=25°C, Tj=175°C, VGS=10V
RθJA=78°C/W,Single Pulse
0.01
1s
DC
0.1 1 10 100
VDS, Drain-Source Voltage(V)
1000
2
1.5
1
0.5 TA=25°C, Tj=175°C,VGS=10V
RθJA=78°C/W
0
25 50 75 100 125 150
TJ, Junction Temperature(°C)
175
MTBA6C12Q8
CYStek Product Specification
5 Page 
CYStech Electronics Corp.
Spec. No. : C973Q8
Issued Date : 2014.09.23
Revised Date :
Page No. : 11/12
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTBA6C12Q8
CYStek Product Specification
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MTBA6C12Q8.PDF ] | |
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