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부품번호 | MTBA6C15J4 기능 |
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기능 | N & P-Channel Enhancement Mode Power MOSFET | ||
제조업체 | CYStech | ||
로고 | |||
CYStech Electronics Corp.
Spec. No. : C938J4
Issued Date : 2014.10.15
Revised Date : 2014.10.28
Page No. : 1/13
N & P-Channel Enhancement Mode Power MOSFET
MTBA6C15J4
BVDSS
ID @VGS=10V(-10V)
Features
• Low gate charge
• Simple drive requirement
• Pb-free lead plating and halogen-free package
RDSON(TYP)@VGS=10V(-10V)
RDSON(TYP)@VGS=4.5V(-4.5V)
N-CH
150V
9.3A
167mΩ
172mΩ
P-CH
-150V
-7.1A
253mΩ
273mΩ
Equivalent Circuit
MTBA6C15J4
Outline
TO-252-4L
G:Gate D:Drain S:Source
Absolute Maximum Ratings (TA=25°C, unless otherwise noted)
Parameter
Symbol
Limits
N-channel P-channel
Drain-Source Voltage
VDS 150
-150
Gate-Source Voltage
VGS ±20
±20
Continuous Drain Current @ TC=25°C, VGS=10V(-10V) (Note1)
Continuous Drain Current @ TC=100°C, VGS=10V(-10V) (Note1)
ID
9.3
6.6
-7.1
-5.0
Continuous Drain Current @ TA=25°C, VGS=10V(-10V) (Note2)
Continuous Drain Current @ TA=70°C, VGS=10V(-10V) (Note2)
IDSM
2
1.7
-1.5
-1.3
Pulsed Drain Current *1
(Note3) IDM
20
-20
Total Power Dissipation (TC=25℃)
Total Power Dissipation (TC=100℃)
(Note1)
(Note1)
PD
37.5
18.7
Total Power Dissipation (TA=25℃)
Total Power Dissipation (TA=70℃)
(Note2)
(Note2)
PDSM
2.4
1.7
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+175
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
Unit
V
A
W
°C
MTBA6C15J4
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C938J4
Issued Date : 2014.10.15
Revised Date : 2014.10.28
Page No. : 4/13
Q1, N-CH Typical Characteristics
20
10V
9V
16 8V
7V
6V
12 5V
4V
8 3.5V
Typical Output Characteristics
VGS=3V
4
VGS=2.5V
0
0 2 4 6 8 10
VDS, Drain-Source Voltage(V)
1000
Static Drain-Source On-State resistance vs Drain Current
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6 ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=2.5V
VGS=4.5V
VGS=3V
100
0.01
VGS=10V
0.1 1 10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
800
700
600 ID=2.5A
500
400
300
200
100
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0
2 46 8
IDR, Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
2.8
VGS=10V, ID=2.5A
2.4 RDS(ON)@Tj=25°C : 167mΩ typ.
2
1.6
1.2
0.8 VGS=4.5V, ID=2A
RDS(ON)@Tj=25°C : 174 mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTBA6C15J4
CYStek Product Specification
4페이지 CYStech Electronics Corp.
Spec. No. : C938J4
Issued Date : 2014.10.15
Revised Date : 2014.10.28
Page No. : 7/13
Q2, P-CH Typical Characteristics
Typical Output Characteristics
20
-10V
-9V
16 -8V
-7V
12
-6V
-5V
VGS=-4V
VGS=-3.5V
8 VGS=-3V
4
VGS=-2.5V
0
0 2 4 6 8 10
-VDS, Drain-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6 ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
1000
VGS=-2.5V
VGS=-3V
Source Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
VGS=-4.5V
VGS=-10V
0.6
0.4
Tj=150°C
100
0.01
0.1 1 10
-ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
600
560 ID=-1.5A
520
480
440
400
360
320
280
240
200
0
2 46 8
-VGS, Gate-Source Voltage(V)
10
0.2
0
2 46 8
-IS, Source Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2.2 VGS=-10V, ID=-1.5A
2 RDS(ON)@Tj=25°C : 253mΩ typ.
1.8
1.6
1.4
1.2
1
0.8 VGS=-4.5V, ID=-1A
0.6 RDS(ON)@Tj=25°C : 274mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTBA6C15J4
CYStek Product Specification
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
MTBA6C15J4 | N & P-Channel Enhancement Mode Power MOSFET | CYStech |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |