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부품번호 | BZD27C4V3P 기능 |
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기능 | VOLTAGE REGULATOR DIODES | ||
제조업체 | GALAXY ELECTRICAL | ||
로고 | |||
전체 4 페이지수
BL GALAXY ELECTRICAL
VOLTAGE REGULATOR DIODES
FEATURES
Sillicon planar zener diodes.
Low profile surface-mount package.
Zener and surge current specification
Low leakage current
Excellent stability
High temperature soldering guaranteed:
265 /10 seconds, at terminals
MECHANICAL DATA
Case: JEDEC SOD-123FL molded plastic
Polarity: Color band denotes positive end
( cathode ) except for bidirectional
Marking code: see TABLE 1
Weight: 0.006 ounces, 0.02 grams
Mounting position: Any
BZD27C---SERIES
BREAKDOWN VOLTAGE : 7 - 188 VOLTS
PEAK PULSE POWER : 150 WATTS
SOD-123FL
Cathode Band
Top View
1.8 0.1
5
0.98 0.1
2.8 0.1
5 0.60 0.25
1.0 0.2
0.05 0.30
3.7 0.2
ABSOLUTE MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified
SYMBOL
VALUE
UNITS
Non-repetitive peak pulse power dissipation
with a 10/1000µs waveform (NOTE 1)
PPPM
150 Watts
Power dissipation at TA=25 (NOTE 2)
Ptot 0.8 Watts
Reverse current at stand-off voltage @ VWM
IR
SEE TABLE 1
µA
Maximum instantaneous forward voltage at 0.2A
VF 1.2 Volts
Thermal resistance junction to ambient
RθJA 180 K/W
Operating temperature junction range
TJ - 55 to +150
Storage temperature range
TSTG
NOTES:(1)TJ=25 prior to surge.
(2)Mounted on epoxy-glass PCB with 3×3 mm Cu pads( 40µm thick)
(3)Non-repetitive peak reverse current in accordance with "IEC 60-1,Section 8" (10/1000µs pulse)
- 55 to +150
www.galaxycn.com
Document Number 0285014
BLGALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
BZD27C--SERIES
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Maximum Pulse Power Dissipation vs. Zener Voltage
10.00
Typ. VF
1.00
Max. VF
0.10
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
VF – Forward Voltage ( V )
160
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
V Znom – Zener Voltage ( V )
Figure 3. Typ. Diode Capacitance vs. Reverse Voltage Figure 4. Non-Repetitive Peak Reverse Current Pulse Definition
10000
C5V1P
C6V8P
C12P
C18P
1000
100
C27P
C51P
C200P
10
0.0 0.5 1.0 1.5 2.0 2.5
VR – Reverse Voltage (V)
3.0
IRSM
(%)
100
90
50
10
t1
t2
t1 = 10 µs
t2 = 1000 µ s
t
Figure 5. Power Dissipation vs. Ambient Temperature
3.0
tie point temperature
2.5
2.0
1.5
1.0 ambient temperature
0.5
0.0
0
25 50 75 100 125
Tamb – Ambient Temperature ( qC )
150
Document Number 0285014
BLGALAXY ELECTRICAL
www.galaxycn.com
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BZD27C4V3P | 800mW ZENER DIODES | Pan Jit International |
BZD27C4V3P | Zener Diodes | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |