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NX5313 데이터시트 PDF




Renesas에서 제조한 전자 부품 NX5313은 전자 산업 및 응용 분야에서
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기능 LASER DIODE
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NX5313 데이터시트, 핀배열, 회로
PRELIMINARY DATA SHEET
LASER DIODE
NX5313 Series
1 310 nm FOR FTTH PON APPLICATION
InGaAsP MQW-FP LASER DIODE
DESCRIPTION
The NX5313 Series is a 1 310 nm Multiple Quantum Well (MQW)
structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These
devices are designed for application up to 1.25 Gb/s.
APPLICATION
• FTTH PON (B-PON, G-PON, GE-PON 10 km) system
FEATURES
• Optical output power
Po = 13.0 mW
• Low threshold current
lth = 6 mA
• Differential Efficiency
ηd = 0.5 W/A
• Wide operating temperature range TC = 40 to +85°C
• InGaAs monitor PIN-PD
• CAN package
φ 5.6 mm
• Focal point
6.35 mm
• LD beam angle optimized for 8 degree angled SMF
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PL10529EJ01V0DS (1st edition)
Date Published August 2004 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices, Ltd. 2004




NX5313 pdf, 반도체, 판매, 대치품
ABSOLUTE MAXIMUM RATINGS
Parameter
Optical Output Power
Forward Current of LD
Reverse Voltage of LD
Forward Current of PD
Reverse Voltage of PD
Operating Case Temperature
Storage Temperature
Assembly Temperature
Lead Soldering Temperature
Relative Humidity (noncondensing)
Symbol
Po
IF
VR
IF
VR
TC
Tstg
Tasb
Tsld
RH
Ratings
20
150
2.0
10
20
40 to +85
40 to +85
150 (15 Hr)
350 (3 sec.)
85
Unit
mW
mA
V
mA
V
°C
°C
°C
°C
%
NX5313 Series
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
Parameter
Operating Voltage
Threshold Current
Differential Efficiency
Center Wavelength
Spectral Width
Rise Time
Fall Time
Monitor Current
Monitor Dark Current
Monitor PD Terminal Capacitance
Fiber Coupling Power
Focal Distance
Symbol
Conditions
Vop Po = 13.0 mW
Ith
ηd
λC Po = 13.0 mW, RMS (20 dB)
TC = 40 to +85°C
σ Po = 13.0 mW, RMS (20 dB)
TC = 40 to +85°C
tr 10-90%
tf 90-10%
Im VR = 1.5 V, Po = 13.0 mW
ID VR = 10 V
Ct VR = 10 V, f = 1 MHz
Pf Po = 13.0 mW, Optimized Coupling with
Df 8 degree angled SMF
MIN.
0.40
1 276
50
5.85
TYP.
1.1
6
0.50
1 310
1.5
0.15
0.15
100
5
2.6
6.35
MAX.
1.5
15
1 352
2.8
0.3
0.3
100
20
6.85
Unit
V
mA
W/A
nm
nm
ns
ns
µA
nA
pF
mW
mm
4 Preliminary Data Sheet PL10529EJ01V0DS

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NX5313 전자부품, 판매, 대치품
NX5313 Series
SAFETY INFORMATION ON THIS PRODUCT
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
OUTPUT POWER
mW MAX
WAVELENGTH
nm
CLASS lllb LASER PRODUCT
SEMICONDUCTOR LASER
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
Warning Laser Beam
Caution GaAs Products
A laser beam is emitted from this diode during operation.
The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of
eyesight.
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
For further information, please contact
NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/
E-mail: [email protected] (sales and general)
[email protected] (technical)
Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: [email protected] (sales, technical and general)
Hong Kong Head Office TEL: +852-3107-7303 FAX: +852-3107-7309
Taipei Branch Office
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
Korea Branch Office
TEL: +82-2-558-2120 FAX: +82-2-558-5209
NEC Electronics (Europe) GmbH http://www.ee.nec.de/
TEL: +49-211-6503-0 FAX: +49-211-6503-1327
California Eastern Laboratories, Inc. http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0406

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