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PDF NX5313EH Data sheet ( Hoja de datos )
| Número de pieza | NX5313EH | |
| Descripción | LASER DIODE | |
| Fabricantes | Renesas | |
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PRELIMINARY DATA SHEET
LASER DIODE
NX5313 Series
1 310 nm FOR FTTH PON APPLICATION
InGaAsP MQW-FP LASER DIODE
DESCRIPTION
The NX5313 Series is a 1 310 nm Multiple Quantum Well (MQW)
structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These
devices are designed for application up to 1.25 Gb/s.
APPLICATION
• FTTH PON (B-PON, G-PON, GE-PON 10 km) system
FEATURES
• Optical output power
Po = 13.0 mW
• Low threshold current
lth = 6 mA
• Differential Efficiency
ηd = 0.5 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package
φ 5.6 mm
• Focal point
6.35 mm
• LD beam angle optimized for 8 degree angled SMF
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PL10529EJ01V0DS (1st edition)
Date Published August 2004 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices, Ltd. 2004
1 page  
NX5313 Series
REFERENCE
Document Name
OPTICAL SEMICONDUCTOR DEVICES FOR FIBEROPTIC COMMUNICATIONS SELECTION GUIDE
Opto-Electronics Devices Pamphlet
Document No.
PL10161E
PX10160E
Preliminary Data Sheet PL10529EJ01V0DS
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NX5313EH.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NX5313EH | LASER DIODE | Renesas |
| NX5313EK | LASER DIODE | Renesas |
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