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Datasheet BZX79C30 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BZX79C30 | Zener Diode Small Signal Product
BZX79C2V0 thru BZX79C75
Taiwan Semiconductor
5% Tolerance Zener Diode
FEATURES
- Wide zener voltage range selection: 2.0V to 75V - VZ Tolerance selection of ±5% - Designed for through-hole device type mounting - Hermetically sealed glasss - Pb free and RoHS compliant - High |  Taiwan Semiconductor | diode |
| 2 | BZX79C30 | Zener Diode Small Signal Product
BZX79C2V0 thru BZX79C75
Taiwan Semiconductor
5% Tolerance Zener Diode
FEATURES
- Wide zener voltage range selection: 2.0V to 75V - VZ Tolerance selection of ±5% - Designed for through-hole device type mounting - Hermetically sealed glasss - Pb free and RoHS compliant - High | Taiwan Semiconductor | diode |
| 3 | BZX79C30 | Series Half Watt Zeners |  Fairchild Semiconductor | data |
| 4 | BZX79C30 | 500 mW DO-35 Glass Zener Voltage Regulator Diodes MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
500 mW DO-35 Glass Zener Voltage Regulator Diodes
GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP
GENERAL DATA
500 mW DO-35 GLASS
GLASS ZENER DIODES 500 MILLIWATTS 1.8–200 VOLTS
500 Milliwatt Hermetically Sealed Glass Silicon Zener Diodes
Specification |  Motorola Inc | diode |
| 5 | BZX79C30 | Zener Diode, Rectifier Zeners BZX79C2V4 - BZX79C180
Zeners BZX79C2V4 - BZX79C180
Absolute Maximum Ratings *
Symbol PD Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Derate above 75°C TJ, TSTG Operating and Storage Temperature Range
TA = 25°C unless otherwise noted
Tolerance = 5%
Units mW mW/°C °C
| Fairchild Semiconductor | data |
BZX Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BZX10 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju  COS diode | | |
| 2 | BZX10 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 3 | BZX11 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
| 4 | BZX11 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 5 | BZX12 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
| 6 | BZX12 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 7 | BZX13 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | |
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