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LNST3904F3T5G 데이터시트 PDF




LRC에서 제조한 전자 부품 LNST3904F3T5G은 전자 산업 및 응용 분야에서
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부품번호 LNST3904F3T5G 기능
기능 NPN General Purpose Transistor
제조업체 LRC
로고 LRC 로고


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LNST3904F3T5G 데이터시트, 핀배열, 회로
LESHAN RADIO COMPANY, LTD.
NPN General Purpose
Transistor
The LNST3904F3T5G device is a spinoff of our popular
SOT23/SOT323/SOT563/SOT963 threeleaded device. It is
designed for general purpose amplifier applications and is housed in
the SOT1123 surface mount package. This device is ideal for
lowpower surface mount applications where board space is at a
premium.
Features
hFE, 100300
Low VCE(sat), 0.4 V
Reduces Board Space
This is a PbFree Device
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LNST3904F3T5G
S-LNST3904F3T5G
COLLECTOR
3
1
BASE
2
EMITTER
LNST3904F3T5G
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
40 Vdc
60 Vdc
6.0 Vdc
200 mAdc
Characteristic
Total Device Dissipation, TA = 25°C
Derate above 25°C
Symbol
PD
(Note 1)
Max
290
2.3
Unit
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA
(Note 1)
432
°C/W
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD 347 mW
(Note 2) 2.8 mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA
(Note 2)
360
°C/W
Thermal Resistance,
JunctiontoLead 3
RYJL
(Note 2)
143
°C/W
Junction and Storage Temperature Range TJ, Tstg
55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 100 mm2 1 oz, copper traces.
2. 500 mm2 1 oz, copper traces.
3
12
SOT1123
CASE 524AA
STYLE 1
MARKING DIAGRAM
2M
2 = Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
LNST3904F3T5G SOT1123 8000/Tape & Reel
S-LNST3904F3T5G (PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Rev.O 1/4




LNST3904F3T5G pdf, 반도체, 판매, 대치품
LESHAN RADIO COMPANY, LTD.
LNST3904F3T5G ;S-LNST3904F3T5G
PACKAGE DIMENSIONS
SOT1123
b1
e
c
D
1
2
HE
X
3
Y
E
b
0.08 (0.0032) X Y
A
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
MILLIMETERS
DIM MIN NOM MAX
A 0.34 0.37 0.40
b 0.15 0.20 0.25
b1 0.10 0.15 0.20
c 0.07 0.12 0.17
D 0.75 0.80 0.85
E 0.55 0.60 0.65
e 0.35
HE 0.95 1.00 1.05
L 0.05 0.10 0.15
INCHES
MIN NOM MAX
0.013 0.015 0.016
0.006 0.008 0.010
0.004 0.006 0.008
0.003 0.005 0.007
0.030 0.031 0.033
0.022 0.024 0.026
0.014
0.037 0.039 0.041
0.002 0.004 0.006
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.35 0.30
0.25
0.90
0.40
DIMENSIONS: MILLIMETERS
Rev.O 4/4

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부품번호상세설명 및 기능제조사
LNST3904F3T5G

NPN General Purpose Transistor

LRC
LRC

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