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부품번호 | LNST3904F3T5G 기능 |
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기능 | NPN General Purpose Transistor | ||
제조업체 | LRC | ||
로고 | |||
LESHAN RADIO COMPANY, LTD.
NPN General Purpose
Transistor
The LNST3904F3T5G device is a spin−off of our popular
SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is
designed for general purpose amplifier applications and is housed in
the SOT−1123 surface mount package. This device is ideal for
low−power surface mount applications where board space is at a
premium.
Features
• hFE, 100−300
• Low VCE(sat), ≤ 0.4 V
• Reduces Board Space
• This is a Pb−Free Device
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LNST3904F3T5G
S-LNST3904F3T5G
COLLECTOR
3
1
BASE
2
EMITTER
LNST3904F3T5G
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
40 Vdc
60 Vdc
6.0 Vdc
200 mAdc
Characteristic
Total Device Dissipation, TA = 25°C
Derate above 25°C
Symbol
PD
(Note 1)
Max
290
2.3
Unit
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
(Note 1)
432
°C/W
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD 347 mW
(Note 2) 2.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
(Note 2)
360
°C/W
Thermal Resistance,
Junction−to−Lead 3
RYJL
(Note 2)
143
°C/W
Junction and Storage Temperature Range TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 100 mm2 1 oz, copper traces.
2. 500 mm2 1 oz, copper traces.
3
12
SOT−1123
CASE 524AA
STYLE 1
MARKING DIAGRAM
2M
2 = Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
LNST3904F3T5G SOT−1123 8000/Tape & Reel
S-LNST3904F3T5G (Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
LNST3904F3T5G ;S-LNST3904F3T5G
PACKAGE DIMENSIONS
SOT−1123
b1
e
c
D
1
2
HE
−X−
3
−Y−
E
b
0.08 (0.0032) X Y
A
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
MILLIMETERS
DIM MIN NOM MAX
A 0.34 0.37 0.40
b 0.15 0.20 0.25
b1 0.10 0.15 0.20
c 0.07 0.12 0.17
D 0.75 0.80 0.85
E 0.55 0.60 0.65
e 0.35
HE 0.95 1.00 1.05
L 0.05 0.10 0.15
INCHES
MIN NOM MAX
0.013 0.015 0.016
0.006 0.008 0.010
0.004 0.006 0.008
0.003 0.005 0.007
0.030 0.031 0.033
0.022 0.024 0.026
0.014
0.037 0.039 0.041
0.002 0.004 0.006
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.35 0.30
0.25
0.90
0.40
DIMENSIONS: MILLIMETERS
Rev.O 4/4
4페이지 | |||
구 성 | 총 4 페이지수 | ||
다운로드 | [ LNST3904F3T5G.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
LNST3904F3T5G | NPN General Purpose Transistor | LRC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |