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부품번호 | LNTA7002NT1G 기능 |
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기능 | Small Signal MOSFET | ||
제조업체 | LRC | ||
로고 | |||
전체 5 페이지수
LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
30 V, 154 mA, Single, N−Channel, Gate
ESD Protection, SC−89
Features
• Low Gate Charge for Fast Switching
• Small 1.6 X 1.6 mm Footprint
• ESD Protected Gate
• We declare that the material of product is ROHS compliant
and halogen free.
• ESDD PPrrootteecctteedd:2:105000VV
• ES-SPDrePfirxotfeocrteAdu:t1o5m0o0tVive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Applications
• Power Management Load Switch
• Level Shift
• Portable Applications such as Cell Phones, Media Players,
Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady State = 25°C
VDSS
VGS
ID
30
"10
154
V
V
mA
Power Dissipation
(Note 1)
Steady State = 25°C PD
300 mW
Pulsed Drain Current
tP v 10 ms
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IDM
TJ,
TSTG
ISD
TL
618
−55 to
150
154
260
mA
°C
mA
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
416 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
LNTA7002NT1G
S-LNTA7002NT1G
SC-89
Gate 1
3 Drain
Source 2
(Top View)
MARKING DIAGRAM
3
T6
12
T6 = Specific Device Code
M = Month Code
ORDERING INFORMATION
Device
Marking Shipping
LNTA7002NT1G
S-LNTA7002NT1G
T6
3000/Tape&Reel
LNTA7002NT3G
S-LNTA7002NT3G
T6
10000/Tape&Reel
Rev .O 1/5
LESHAN RADIO COMPANY, LTD.
LNTA7002NT1G , S-LNTA7002NT1G
25
Ciss
20 Crss
15
TYPICAL PERFORMANCE CURVES
TJ = 25°C
1000
100
VDD = 5.0 V
ID = 75 mA
VGS = 4.5 V
td(off)
tf
10
Ciss
5 Coss
0 VDS = 0 V VGS = 0 V
10 5 0 5 10
VGS VDS
Crss
15 20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
10
1
1
tr
td(on)
10
RG, GATE RESISTANCE (OHMS)
Figure 8. Resistive Switching Time
Variation vs. Gate Resistance
100
0.16
0.14
0.12
VGS = 0 V
TJ = 25°C
0.1
0.08
0.06
0.04
0.02
0
0.5 0.55 0.6 0.65 0.7 0.75
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.8
Figure 9. Diode Forward Voltage vs. Current
Rev .O 4/5
4페이지 | |||
구 성 | 총 5 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
LNTA7002NT1G | Small Signal MOSFET | LRC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |