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S-LNTK3043PT5G 데이터시트 PDF




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부품번호 S-LNTK3043PT5G 기능
기능 Power MOSFET ( Transistor )
제조업체 LRC
로고 LRC 로고


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S-LNTK3043PT5G 데이터시트, 핀배열, 회로
LESHAN RADIO COMPANY, LTD.
Power MOSFET
20 V, 285 mA, P−Channel with ESD
Protection, SOT−723
Features
Enables High Density PCB Manufacturing
44% Smaller Footprint than SC−89 and 38% Thinner than SC−89
Low Voltage Drive Makes this Device Ideal for Portable Equipment
Low Threshold Levels, VGS(TH) < 1.3 V
Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin
Environments such as Portable Electronics
Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels Using the Same Basic Topology
These are Pb−Free Devices
S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
Applications
Interfacing, Switching
High Speed Switching
Cellular Phones, PDAs
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
tv5s
Steady
State
tv5s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
20 V
±10 V
255
185 mA
285
440
mW
545
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
210
mA
155
310 mW
Pulsed Drain Current
tp = 10 ms
IDM
Operating Junction and Storage Temperature TJ, TSTG
400
−55 to
150
mA
°C
Source Current (Body Diode) (Note 2)
IS 286 mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size.
LNTK3043PT5G
S-LNTK3043PT5G
V(BR)DSS
20 V
RDS(on) TYP
1.5 W @ 4.5 V
2.4 W @ 2.5 V
5.1 W @ 1.8 V
6.8 W @ 1.65 V
Top View
3
ID Max
285 mA
12
1 − Gate
2 − Source
3 − Drain
MARKING
DIAGRAM
SOT−723
CASE 631AA
KB
1
KB = Device Code
M = Date Code
ORDERING INFORMATION
Device
LNTK3043PT5G
S-LNTK3043PT5G
Package
Shipping
SOT−723* 8000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*These packages are inherently Pb−Free.
Rev .O 1/5




S-LNTK3043PT5G pdf, 반도체, 판매, 대치품
LESHAN RADIO COMPANY, LTD.
LNTK3043PT5G , S-LNTK3043PT5G
TYPICAL PERFORMANCE CURVES
25
Ciss
20
Crss
15
10
5
TJ = 25°C
Ciss
Coss
1000
VDD = 5 V
ID = 10 mA
VGS = 4.5 V
100 td(off)
tf
tr
10 td(on)
0 VDS = 0 V VGS = 0 V
Crss
10 5 0 5 10 15 20
1
1
10 100
VGS
VDS
RG, GATE RESISTANCE (OHMS)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 8. Resistive Switching Time
Figure 7. Capacitance Variation
Variation vs. Gate Resistance
0.4
VGS = 0 V
0.3
TJ = 25°C
0.2
0.1
0
0.4
TJ = 150°C
TJ = 125°C
TJ = −55°C
0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Diode Forward Voltage vs. Current
Rev .O 4/5

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S-LNTK3043PT5G

Power MOSFET ( Transistor )

LRC
LRC

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