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부품번호 | LNTK4003M3T5G 기능 |
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기능 | Small Signal MOSFET | ||
제조업체 | LRC | ||
로고 | |||
LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
30 V, 0.56 A, Single, N−Channel, Gate
ESD Protection, SOT723
Features
• Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design
• Low Gate Charge for Fast Switching
• ESD Protected Gate
• Minimum Breakdown Voltage Rating of 30 V
• We declare that the material of product is ROHS compliant
and halogen free.
• S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Applications
• Level Shifters
• Level Switches
• Low Side Load Switches
• Portable Applications
LNTK4003M3T5G
S-LNTK4003M3T5G
3
1
SOT-723
2
Drain
3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady TA = 25°C
State
TA = 85°C
Steady State
VDSS
VGS
ID
PD
30
±20
0.5
0.37
0.44
Unit
V
V
A
W
Gate 1
2
Source
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
t < 5 s TA = 25°C
TA = 85°C
t<5s
ID
PD
0.56
0.40
0.545
A
W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
IDM 1.7 A
TJ, −55 to °C
Tstg 150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IS 1.0 A
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − t = 5s (Note 1)
Junction−to−Ambient − Steady State (Note 2)
RqJA
RqJA
RqJA
280 °C/W
228
400
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
MARKING DIAGRAM
3
Drain
KM
1
Gate
2
Source
KM = Specific Device Code
M = Month Code
ORDERING INFORMATION
Device
Package
Shipping
LNTK4003M3T5G SOT723 3000/Tape & Reel
S-LNTK4003M3T5G
LNTK4003M3T5G SOT723 10,000/Tape & Reel
S-LNTK4003M3T5G
Rev .O 1/5
LESHAN RADIO COMPANY, LTD.
50
40
30
20
10
0
0
LNTK4003M3T5G , S-LNTK4003M3T5G
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
TJ = 25°C
VGS = 0 V
5
TJ = 25°C
ID = 0.1 A
4
Ciss
Coss
Crss
4 8 12 16
DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
20
3
2
1
0
0 0.4 0.8 1.2
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source & Drain−to−Source
Voltage vs. Total Charge
1
VGS = 0 V
0.1
0.01 TJ = 150°C
TJ = 25°C
0.001
0.4
0.6
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
0.8
Figure 9. Diode Forward Voltage vs. Current
Rev .O 4/5
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부품번호 | 상세설명 및 기능 | 제조사 |
LNTK4003M3T5G | Small Signal MOSFET | LRC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |