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부품번호 | LP3401LT1G 기능 |
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기능 | P-Channel Enhancement-Mode MOSFET | ||
제조업체 | LRC | ||
로고 | |||
전체 5 페이지수
LESHAN RADIO COMPANY, LTD.
30V P-Channel Enhancement-Mode MOSFET
LP3401LT1G
S-LP3401LT1G
VDS (V) = -30V
RDS(ON) < 70mΩ (VGS = -10V)
RDS(ON) < 80mΩ (VGS = -4.5V)
RDS(ON) < 120mΩ (VGS = -2.5V)
FEATURES
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
ORDERING INFORMATION
Device
LP3401LT1G
S-LP3401LT1G
LP3401LT3G
S-LP3401LT3G
Marking
A1
A1
Shipping
3000/Tape&Reel
10000/Tape&Reel
3
1
2
SOT– 23 (TO–236AB)
3D
G
1
S
2
MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ, TSTG
Maximum
-30
±12
-4.2
-3.5
-30
1.4
1
-55 to 150
Units
V
V
A
W
°C
THERMAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
65
85
43
Max
90
125
60
Units
°C/W
°C/W
°C/W
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
Rev .O 1/5
LESHAN RADIO COMPANY, LTD.
LP3401LT1G , S-LP3401LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
5
VDS=-15V
ID=-4A
4
3
2
1
0
0 2 4 6 8 10 12
-Qg (nC)
Figure 7: Gate-Charge Characteristics
1400
1200
1000
800
Ciss
600
400
200
Coss
Crss
0
0 5 10 15 20 25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
100.0 TJ(Max)=150°C
TA=25°C
RDS(ON)
10.0 limited
10µs
100µs
1ms
0.1s 10ms
1.0
1s
0.1
0.1
10s
DC
1 10
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
40
TJ(Max)=150°C
TA=25°C
30
20
10
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.00001
0.0001
PD
Single Pulse
Ton
T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
Rev .O 4/5
4페이지 | |||
구 성 | 총 5 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
LP3401LT1G | P-Channel Enhancement-Mode MOSFET | LRC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |