PDF LP3415ELT1G Data sheet ( Hoja de datos )

Número de pieza	LP3415ELT1G
Descripción	P-Channel Enhancement-Mode MOSFET
Fabricantes	LRC
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Hay una vista previa y un enlace de descarga de LP3415ELT1G (archivo pdf) en la parte inferior de esta página. Total 3 Páginas
No Preview Available ! LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), [email protected], Ids@-4A = 60 mΩ RDS(ON), [email protected], Ids@-4A = 75 mΩ RDS(ON), [email protected], Ids@-2A = 85 mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance we declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device Ordering Information Device LP3415ELT1G S-LP3415ELT1G LP3415ELT3G S-LP3415ELT3G Marking P15 P15 Shipping 3000/Tape& Reel 10000/Tape& Reel LP3415ELT1G S-LP3415ELT1G 3 1 2 SOT– 23 (TO–236AB) 3 1 2 Maximum Ratings and Thermal Characteristics (TA= 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current ID Pulsed Drain Current 1) Maximum Power Dissipation TA = 25oC TA = 75oC IDM PD Operating Junction and Storage Temperature Range TJ, Tstg Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance (PCB mounted) 2) Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing RqJC RqJA Limit -20 ±8 -4 -30 1 0.6 -55 to 150 100 150 Unit V A W oC oC/W Rev .O 1/3 1 page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
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