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Número de pieza | H5N5005PL | |
Descripción | Silicon N-Channel MOS FET | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de H5N5005PL (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! H5N5005PL
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance: RDS(on) = 0.070 Ω typ.
• Low leakage current: IDSS = 10 µA max (at VDS = 500 V)
• High speed switching: tf = 300 ns typ (at VGS = 10 V, ID = 30 A, RL = 8.33 Ω)
• Low gate charge: Qg = 300 nC typ (at VDD = 400 V, VGS = 10 V, ID = 60 A)
• Avalanche ratings
• Built-in fast recovery diode: trr = 220 ns typ
Outline
RENESAS Package code: PRSS0004ZF-A
(Package name: TO-3PL)
D
REJ03G0419-0400
Rev.4.00
May 13, 2009
1
2
3
G
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IDR (pulse) Note1
IAP Note3
Pch Note2
θch-c
Tch
Tstg
1. Gate
2. Drain (Flange)
3. Source
S
Ratings
500
±30
60
240
60
240
30
270
0.463
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
REJ03G0419-0400 Rev.4.00 May 13, 2009
Page 1 of 6
1 page H5N5005PL
Reverse Drain Current vs.
Source to Drain Voltage
200
Pulse Test
160
5 V, 10 V
120
VGS = 0 V
80
40
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Gate to Source Cutoff Voltage
vs. Case Temperature
6
5
4 ID = 10 mA
3
2
1 mA
1
0 VDS = 10 V
–50 0
50
0.1 mA
100 150 200
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.01
1shot
pulse
0.01
10 µ
100 µ
θch – c(t) = γs (t) • θch – c
θch – c = 0.463°C/W, Tc = 25°C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 250 V
Waveform
90%
Vin
Vout
10%
10%
10%
90%
90%
td(on)
tr td(off)
tf
REJ03G0419-0400 Rev.4.00 May 13, 2009
Page 5 of 6
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet H5N5005PL.PDF ] |
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